Low noise superjunction MOSFET with integrated snubber structure

Hiroaki Yamashita, Syotaro Ono, Hisao Ichijo, Masataka Tsuji, Takenori Yasuzumi, Masaru Izumisawa, Wataru Saito

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-Type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts as gate-drain capacitance (Cgd) only at high-frequency band. Switching noise generated during turn-off transient is absorbed by the snubber without increasing switching loss. We verified the concept by simulation and experiments, and confirmed better trade-off between EMI (Electromagnetic interference) and efficiency.

Original languageEnglish
Title of host publication2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages32-35
Number of pages4
ISBN (Electronic)9781538629260
DOIs
Publication statusPublished - Jun 22 2018
Externally publishedYes
Event30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 - Chicago, United States
Duration: May 13 2018May 17 2018

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2018-May
ISSN (Print)1063-6854

Conference

Conference30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
CountryUnited States
CityChicago
Period5/13/185/17/18

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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