Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices

K. Yousef, Hongting Jia, Ramesh Pokharel, A. Allam, M. Ragab, Haruichi Kanaya, K. Yoshida

Research output: Contribution to conferencePaper

Abstract

This paper presents the design of an ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs common gate and common source stages configured as a current reuse topology. The UWB LNA has a maximum gain of 14 dB with minimum NF of 3.0 dB. Good input and output impedance matching are achieved over the operating frequency band. The proposed UWB LNA consumes only 2.0 mW from a 0.9V power supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.

Original languageEnglish
Pages68-70
Number of pages3
DOIs
Publication statusPublished - Jan 1 2013
Event2013 2nd International Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2013 - Cairo, Egypt
Duration: Dec 17 2013Dec 19 2013

Other

Other2013 2nd International Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2013
CountryEgypt
CityCairo
Period12/17/1312/19/13

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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    Yousef, K., Jia, H., Pokharel, R., Allam, A., Ragab, M., Kanaya, H., & Yoshida, K. (2013). Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices. 68-70. Paper presented at 2013 2nd International Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2013, Cairo, Egypt. https://doi.org/10.1109/JEC-ECC.2013.6766387