Low-temperature (∼180°C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

Ryo Matsumura, Hironori Chikita, Yuki Kai, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

To realize next-generation flexible thin-film devices, solid-phase crystallization (SPC) of amorphous germanium tin (GeSn) films on insulating substrates combined with seeds formed by laser annealing (LA) has been investigated. This technique enables the crystallization of GeSn at controlled positions at low temperature (∼180°C) due to the determination of the starting points of crystallization by LA seeding and Sn-induced SPC enhancement. The GeSn crystals grown by SPC from LA seeds showed abnormal lateral profiles of substitutional Sn concentration. These lateral profiles are caused by the annealing time after crystallization being a function of distance from the LA seeds. This observation of a post-annealing effect also indicates that GeSn with a substitutional Sn concentration of up to ∼10% possesses high thermal stability. These results will facilitate the fabrication of next-generation thin-film devices on flexible plastic substrates with low softening temperatures (∼250°C).

Original languageEnglish
Article number262106
JournalApplied Physics Letters
Volume107
Issue number26
DOIs
Publication statusPublished - Dec 28 2015

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inoculation
solid phases
laser annealing
crystallization
lasers
seeds
annealing
thin films
profiles
softening
germanium
tin
thermal stability
plastics
fabrication
augmentation
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Low-temperature (∼180°C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding. / Matsumura, Ryo; Chikita, Hironori; Kai, Yuki; Sadoh, Taizoh; Ikenoue, Hiroshi; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 107, No. 26, 262106, 28.12.2015.

Research output: Contribution to journalArticle

@article{2539af1d1e5a487abf56609396dca652,
title = "Low-temperature (∼180°C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding",
abstract = "To realize next-generation flexible thin-film devices, solid-phase crystallization (SPC) of amorphous germanium tin (GeSn) films on insulating substrates combined with seeds formed by laser annealing (LA) has been investigated. This technique enables the crystallization of GeSn at controlled positions at low temperature (∼180°C) due to the determination of the starting points of crystallization by LA seeding and Sn-induced SPC enhancement. The GeSn crystals grown by SPC from LA seeds showed abnormal lateral profiles of substitutional Sn concentration. These lateral profiles are caused by the annealing time after crystallization being a function of distance from the LA seeds. This observation of a post-annealing effect also indicates that GeSn with a substitutional Sn concentration of up to ∼10{\%} possesses high thermal stability. These results will facilitate the fabrication of next-generation thin-film devices on flexible plastic substrates with low softening temperatures (∼250°C).",
author = "Ryo Matsumura and Hironori Chikita and Yuki Kai and Taizoh Sadoh and Hiroshi Ikenoue and Masanobu Miyao",
year = "2015",
month = "12",
day = "28",
doi = "10.1063/1.4939109",
language = "English",
volume = "107",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "26",

}

TY - JOUR

T1 - Low-temperature (∼180°C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

AU - Matsumura, Ryo

AU - Chikita, Hironori

AU - Kai, Yuki

AU - Sadoh, Taizoh

AU - Ikenoue, Hiroshi

AU - Miyao, Masanobu

PY - 2015/12/28

Y1 - 2015/12/28

N2 - To realize next-generation flexible thin-film devices, solid-phase crystallization (SPC) of amorphous germanium tin (GeSn) films on insulating substrates combined with seeds formed by laser annealing (LA) has been investigated. This technique enables the crystallization of GeSn at controlled positions at low temperature (∼180°C) due to the determination of the starting points of crystallization by LA seeding and Sn-induced SPC enhancement. The GeSn crystals grown by SPC from LA seeds showed abnormal lateral profiles of substitutional Sn concentration. These lateral profiles are caused by the annealing time after crystallization being a function of distance from the LA seeds. This observation of a post-annealing effect also indicates that GeSn with a substitutional Sn concentration of up to ∼10% possesses high thermal stability. These results will facilitate the fabrication of next-generation thin-film devices on flexible plastic substrates with low softening temperatures (∼250°C).

AB - To realize next-generation flexible thin-film devices, solid-phase crystallization (SPC) of amorphous germanium tin (GeSn) films on insulating substrates combined with seeds formed by laser annealing (LA) has been investigated. This technique enables the crystallization of GeSn at controlled positions at low temperature (∼180°C) due to the determination of the starting points of crystallization by LA seeding and Sn-induced SPC enhancement. The GeSn crystals grown by SPC from LA seeds showed abnormal lateral profiles of substitutional Sn concentration. These lateral profiles are caused by the annealing time after crystallization being a function of distance from the LA seeds. This observation of a post-annealing effect also indicates that GeSn with a substitutional Sn concentration of up to ∼10% possesses high thermal stability. These results will facilitate the fabrication of next-generation thin-film devices on flexible plastic substrates with low softening temperatures (∼250°C).

UR - http://www.scopus.com/inward/record.url?scp=84954053945&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84954053945&partnerID=8YFLogxK

U2 - 10.1063/1.4939109

DO - 10.1063/1.4939109

M3 - Article

AN - SCOPUS:84954053945

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 262106

ER -