Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The gold-induced crystallization technique has been investigated to achieve poly-Si films on insulators at low temperatures (≤250°C). By annealing (∼250°C) the amorphous Si (a-Si)/Au stacked structures formed on insulating substrates, the positions of Si/Au layers are inverted, and Au/poly-Si stacked structures are obtained. On the other hand, by annealing (>400°C) the structures, mixed layers of c-Si and Au are obtained. These growth phenomena are explained on the basis of the eutectic reaction. This gold-induced layer-exchange growth technique at low-temperatures (∼250°C) is very useful to obtain poly-Si on flexible substrates, which are essential to realize flexible high-speed thin-films transistors and high-efficiency solar cells.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages2196-2198
Number of pages3
DOIs
Publication statusPublished - 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period11/21/1011/24/10

Fingerprint

Polysilicon
Gold
Crystallization
Substrates
Annealing
Thin film transistors
Temperature
Eutectics
Solar cells

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Park, J. H., Kurosawa, M., Kawabata, N., Miyao, M., & Sadoh, T. (2010). Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2196-2198). [5686705] https://doi.org/10.1109/TENCON.2010.5686705

Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique. / Park, Jong Hyeok; Kurosawa, Masashi; Kawabata, Naoyuki; Miyao, Masanobu; Sadoh, Taizoh.

TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2196-2198 5686705.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Park, JH, Kurosawa, M, Kawabata, N, Miyao, M & Sadoh, T 2010, Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique. in TENCON 2010 - 2010 IEEE Region 10 Conference., 5686705, pp. 2196-2198, 2010 IEEE Region 10 Conference, TENCON 2010, Fukuoka, Japan, 11/21/10. https://doi.org/10.1109/TENCON.2010.5686705
Park JH, Kurosawa M, Kawabata N, Miyao M, Sadoh T. Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique. In TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. p. 2196-2198. 5686705 https://doi.org/10.1109/TENCON.2010.5686705
Park, Jong Hyeok ; Kurosawa, Masashi ; Kawabata, Naoyuki ; Miyao, Masanobu ; Sadoh, Taizoh. / Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique. TENCON 2010 - 2010 IEEE Region 10 Conference. 2010. pp. 2196-2198
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