Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator

Taizoh Sadoh, Masashi Kurosawa, Takashi Hagihara, Kaoru Toko, Masanobu Miyao

Research output: Contribution to journalArticle

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Abstract

Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number7
DOIs
Publication statusPublished - Jun 29 2011

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Crystallization
Metals
insulators
crystallization
metals
Growth temperature
Substrates
Temperature
Catalysis
catalysis
Nucleation
high speed
nucleation
catalysts
Catalysts
nuclei

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this

Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator. / Sadoh, Taizoh; Kurosawa, Masashi; Hagihara, Takashi; Toko, Kaoru; Miyao, Masanobu.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 7, 29.06.2011.

Research output: Contribution to journalArticle

Sadoh, Taizoh ; Kurosawa, Masashi ; Hagihara, Takashi ; Toko, Kaoru ; Miyao, Masanobu. / Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator. In: Electrochemical and Solid-State Letters. 2011 ; Vol. 14, No. 7.
@article{d4dabd864c234920b720ba62958a6ff2,
title = "Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator",
abstract = "Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.",
author = "Taizoh Sadoh and Masashi Kurosawa and Takashi Hagihara and Kaoru Toko and Masanobu Miyao",
year = "2011",
month = "6",
day = "29",
doi = "10.1149/1.3582794",
language = "English",
volume = "14",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "7",

}

TY - JOUR

T1 - Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator

AU - Sadoh, Taizoh

AU - Kurosawa, Masashi

AU - Hagihara, Takashi

AU - Toko, Kaoru

AU - Miyao, Masanobu

PY - 2011/6/29

Y1 - 2011/6/29

N2 - Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

AB - Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

UR - http://www.scopus.com/inward/record.url?scp=79959547655&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959547655&partnerID=8YFLogxK

U2 - 10.1149/1.3582794

DO - 10.1149/1.3582794

M3 - Article

AN - SCOPUS:79959547655

VL - 14

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 7

ER -