Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator

Taizoh Sadoh, Masashi Kurosawa, Takashi Hagihara, Kaoru Toko, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number7
DOIs
Publication statusPublished - Jun 29 2011

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

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