Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Low-temperature (∼250°C) layer exchange crystallization of poly-Si 1 - xGe x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (∼250°C, 20 h) of the a-Si 1 - xGe x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.

Original languageEnglish
Pages (from-to)3293-3295
Number of pages3
JournalThin Solid Films
Volume520
Issue number8
DOIs
Publication statusPublished - Feb 1 2012

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Crystallization
insulators
crystallization
Substrates
Polysilicon
Temperature
Annealing
Plastics
Catalysts
plastics
catalysts
annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices. / Park, Jong Hyeok; Kurosawa, Masashi; Kawabata, Naoyuki; Miyao, Masanobu; Sadoh, Taizoh.

In: Thin Solid Films, Vol. 520, No. 8, 01.02.2012, p. 3293-3295.

Research output: Contribution to journalArticle

Park, Jong Hyeok ; Kurosawa, Masashi ; Kawabata, Naoyuki ; Miyao, Masanobu ; Sadoh, Taizoh. / Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices. In: Thin Solid Films. 2012 ; Vol. 520, No. 8. pp. 3293-3295.
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