Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure

Hironori Chikita, Ryo Matsumura, Taizoh Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si(100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

Original languageEnglish
Title of host publicationQuantum, Nano, Micro Technologies and Applied Researches
Pages137-140
Number of pages4
DOIs
Publication statusPublished - Jan 16 2014
Event2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 - , Singapore
Duration: Dec 1 2013Dec 2 2013

Publication series

NameApplied Mechanics and Materials
Volume481
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
CountrySingapore
Period12/1/1312/2/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Chikita, H., Matsumura, R., Sadoh, T., & Miyao, M. (2014). Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure. In Quantum, Nano, Micro Technologies and Applied Researches (pp. 137-140). (Applied Mechanics and Materials; Vol. 481). https://doi.org/10.4028/www.scientific.net/AMM.481.137