Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure

Hironori Chikita, Ryo Matsumura, Taizoh Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si(100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.

Original languageEnglish
Title of host publicationQuantum, Nano, Micro Technologies and Applied Researches
Pages137-140
Number of pages4
DOIs
Publication statusPublished - Jan 16 2014
Event2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013 - , Singapore
Duration: Dec 1 2013Dec 2 2013

Publication series

NameApplied Mechanics and Materials
Volume481
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
Country/TerritorySingapore
Period12/1/1312/2/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure'. Together they form a unique fingerprint.

Cite this