Low-temperature annealing of n-type β-FeSi2/p-type si heterojunctions

Mahmoud Shaban, Keita Nomoto, Kazuhiro Nakashima, Tsuyoshi Yoshitake

Research output: Contribution to journalArticle

23 Citations (Scopus)


β-FeSi2 thin films epitaxially grown on Si(111) were annealed in vacuum at different annealing temperatures. The effects of low-temperature postannealing on the photovoltaic properties of β-FeSia2/Si heterojunctions were investigated. The heterojunctions annealed at 300°C exhibited an apparent improvement in photovoltaic performance as compared with as-grown heterojunctions. This improvement may be due to Fe atoms, that diffused into the Si substrate during β-FeSi2 film deposition, were gettered by the postannealing process.

Original languageEnglish
Pages (from-to)3444-3446
Number of pages3
JournalJapanese journal of applied physics
Issue number5 PART 1
Publication statusPublished - May 16 2008

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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