β-FeSi2 thin films epitaxially grown on Si(111) were annealed in vacuum at different annealing temperatures. The effects of low-temperature postannealing on the photovoltaic properties of β-FeSia2/Si heterojunctions were investigated. The heterojunctions annealed at 300°C exhibited an apparent improvement in photovoltaic performance as compared with as-grown heterojunctions. This improvement may be due to Fe atoms, that diffused into the Si substrate during β-FeSi2 film deposition, were gettered by the postannealing process.
|Number of pages||3|
|Journal||Japanese journal of applied physics|
|Issue number||5 PART 1|
|Publication status||Published - May 16 2008|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)