Low-temperature annealing of n-type β-FeSi2/p-type si heterojunctions

Mahmoud Shaban, Keita Nomoto, Kazuhiro Nakashima, Tsuyoshi Yoshitake

    Research output: Contribution to journalArticlepeer-review

    23 Citations (Scopus)


    β-FeSi2 thin films epitaxially grown on Si(111) were annealed in vacuum at different annealing temperatures. The effects of low-temperature postannealing on the photovoltaic properties of β-FeSia2/Si heterojunctions were investigated. The heterojunctions annealed at 300°C exhibited an apparent improvement in photovoltaic performance as compared with as-grown heterojunctions. This improvement may be due to Fe atoms, that diffused into the Si substrate during β-FeSi2 film deposition, were gettered by the postannealing process.

    Original languageEnglish
    Pages (from-to)3444-3446
    Number of pages3
    JournalJapanese journal of applied physics
    Issue number5 PART 1
    Publication statusPublished - May 16 2008

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)


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