Low-temperature annealing of n-type β-FeSi2/p-type si heterojunctions

Mahmoud Shaban; Keita Nomoto; Kazuhiro Nakashima; Tsuyoshi Yoshitake

doi:10.1143/JJAP.47.3444

Low-temperature annealing of n-type β-FeSi₂/p-type si heterojunctions

Mahmoud Shaban, Keita Nomoto, Kazuhiro Nakashima, Tsuyoshi Yoshitake

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

β-FeSi₂ thin films epitaxially grown on Si(111) were annealed in vacuum at different annealing temperatures. The effects of low-temperature postannealing on the photovoltaic properties of β-FeSia₂/Si heterojunctions were investigated. The heterojunctions annealed at 300°C exhibited an apparent improvement in photovoltaic performance as compared with as-grown heterojunctions. This improvement may be due to Fe atoms, that diffused into the Si substrate during β-FeSi₂ film deposition, were gettered by the postannealing process.

Original language	English
Pages (from-to)	3444-3446
Number of pages	3
Journal	Japanese journal of applied physics
Volume	47
Issue number	5 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.3444
Publication status	Published - May 16 2008

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1143/JJAP.47.3444

Cite this

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abstract = "β-FeSi2 thin films epitaxially grown on Si(111) were annealed in vacuum at different annealing temperatures. The effects of low-temperature postannealing on the photovoltaic properties of β-FeSia2/Si heterojunctions were investigated. The heterojunctions annealed at 300°C exhibited an apparent improvement in photovoltaic performance as compared with as-grown heterojunctions. This improvement may be due to Fe atoms, that diffused into the Si substrate during β-FeSi2 film deposition, were gettered by the postannealing process.",

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AU - Nomoto, Keita

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AU - Yoshitake, Tsuyoshi

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