Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems

Seiya Matsuoka; Michitaka Yamamoto; Eiji Higurashi; Tadatomo Suga; Renshi Sawada

doi:10.1109/ICEP-IAAC.2015.7111132

Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems

Seiya Matsuoka, Michitaka Yamamoto, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

This study investigated the effect of nitrogen (N₂) atmospheric-pressure (AP) plasma treatment on the Au-Au bonding property. Surface analysis using x-ray photoelectron spectroscopy (XPS) before and after AP plasma treatment with different gases: N₂ and Ar+O₂ was performed. In the case of Ar+O₂ AP plasma treatment, the oxidation of the Au surface (Au₂O₃) was detected by the chemical shift of the 4f levels in XPS spectra. In contrast, no oxidation of Au surfaces was observed after N₂ AP plasma treatment. N₂ AP plasma treatment was effective in improving the bondability between Au/Au compared with Ar+O₂ AP plasma treatment (bonding temperature: 150°C).

Original language	English
Title of host publication	ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	850-853
Number of pages	4
ISBN (Electronic)	9784904090138
DOIs	https://doi.org/10.1109/ICEP-IAAC.2015.7111132
Publication status	Published - May 20 2015
Event	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan Duration: Apr 14 2015 → Apr 17 2015

Publication series

Name	ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

Other

Other	2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Country/Territory	Japan
City	Kyoto
Period	4/14/15 → 4/17/15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/ICEP-IAAC.2015.7111132

Cite this

Matsuoka, S., Yamamoto, M., Higurashi, E., Suga, T., & Sawada, R. (2015). Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 850-853). [7111132] (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111132

Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems. / Matsuoka, Seiya; Yamamoto, Michitaka; Higurashi, Eiji et al.
ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 850-853 7111132 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsuoka, S, Yamamoto, M, Higurashi, E, Suga, T & Sawada, R 2015, Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems. in ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference., 7111132, ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, Institute of Electrical and Electronics Engineers Inc., pp. 850-853, 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015, Kyoto, Japan, 4/14/15. https://doi.org/10.1109/ICEP-IAAC.2015.7111132

Matsuoka S, Yamamoto M, Higurashi E, Suga T, Sawada R. Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 850-853. 7111132. (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference). doi: 10.1109/ICEP-IAAC.2015.7111132

Matsuoka, Seiya ; Yamamoto, Michitaka ; Higurashi, Eiji et al. / Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems. ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 850-853 (ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference).

@inproceedings{943ddb0c88fa422ea71670eff806cad4,

title = "Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems",

abstract = "This study investigated the effect of nitrogen (N2) atmospheric-pressure (AP) plasma treatment on the Au-Au bonding property. Surface analysis using x-ray photoelectron spectroscopy (XPS) before and after AP plasma treatment with different gases: N2 and Ar+O2 was performed. In the case of Ar+O2 AP plasma treatment, the oxidation of the Au surface (Au2O3) was detected by the chemical shift of the 4f levels in XPS spectra. In contrast, no oxidation of Au surfaces was observed after N2 AP plasma treatment. N2 AP plasma treatment was effective in improving the bondability between Au/Au compared with Ar+O2 AP plasma treatment (bonding temperature: 150°C).",

author = "Seiya Matsuoka and Michitaka Yamamoto and Eiji Higurashi and Tadatomo Suga and Renshi Sawada",

year = "2015",

month = may,

day = "20",

doi = "10.1109/ICEP-IAAC.2015.7111132",

language = "English",

series = "ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "850--853",

booktitle = "ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference",

address = "United States",

note = "2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 ; Conference date: 14-04-2015 Through 17-04-2015",

}

TY - GEN

T1 - Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems

AU - Matsuoka, Seiya

AU - Yamamoto, Michitaka

AU - Higurashi, Eiji

AU - Suga, Tadatomo

AU - Sawada, Renshi

PY - 2015/5/20

Y1 - 2015/5/20

N2 - This study investigated the effect of nitrogen (N2) atmospheric-pressure (AP) plasma treatment on the Au-Au bonding property. Surface analysis using x-ray photoelectron spectroscopy (XPS) before and after AP plasma treatment with different gases: N2 and Ar+O2 was performed. In the case of Ar+O2 AP plasma treatment, the oxidation of the Au surface (Au2O3) was detected by the chemical shift of the 4f levels in XPS spectra. In contrast, no oxidation of Au surfaces was observed after N2 AP plasma treatment. N2 AP plasma treatment was effective in improving the bondability between Au/Au compared with Ar+O2 AP plasma treatment (bonding temperature: 150°C).

AB - This study investigated the effect of nitrogen (N2) atmospheric-pressure (AP) plasma treatment on the Au-Au bonding property. Surface analysis using x-ray photoelectron spectroscopy (XPS) before and after AP plasma treatment with different gases: N2 and Ar+O2 was performed. In the case of Ar+O2 AP plasma treatment, the oxidation of the Au surface (Au2O3) was detected by the chemical shift of the 4f levels in XPS spectra. In contrast, no oxidation of Au surfaces was observed after N2 AP plasma treatment. N2 AP plasma treatment was effective in improving the bondability between Au/Au compared with Ar+O2 AP plasma treatment (bonding temperature: 150°C).

UR - http://www.scopus.com/inward/record.url?scp=84936128393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84936128393&partnerID=8YFLogxK

U2 - 10.1109/ICEP-IAAC.2015.7111132

DO - 10.1109/ICEP-IAAC.2015.7111132

M3 - Conference contribution

AN - SCOPUS:84936128393

T3 - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

SP - 850

EP - 853

BT - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015

Y2 - 14 April 2015 through 17 April 2015

ER -

Low temperature Au-Au surface-activated bonding using nitrogen atmospheric-pressure plasma treatment for optical microsystems

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