Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Surface activated bonding (SAB) method with atmospheric-pressure plasma treatment is an effective approach to develop low cost, low damage, and low temperature bonding technology. In this research, not only conventional low-pressure plasma treatment (Ar RF plasma) but also atmospheric-pressure plasma treatment (Ar+O2, Ar+H2) was investigated for low-temperature Au-Au surface-activated bonding (150°C). In the case of Au thin film to Au thin film bonding, enough bonding strength was not obtained with Ar+O2 atmospheric-pressure plasma treatment due to Au 2O3 formed on Au surface. However, by using Au microbump (diameter at the top: 5 μm, height: 2 μm, and pitch: 10 μm), strong bonding strength was obtained with all these plasmas. Semiconductor laser diodes chips were successfully bonded to Si substrates wiht Au microbumps at low temperature (150°C) in ambient air using Ar+H2 atmospheric-pressure plasma treatment.

Original languageEnglish
Title of host publication2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Pages475-477
Number of pages3
DOIs
Publication statusPublished - Nov 25 2009
Event2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 - Beijing, China
Duration: Aug 10 2009Aug 13 2009

Publication series

Name2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009

Other

Other2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
CountryChina
CityBeijing
Period8/10/098/13/09

Fingerprint

Atmospheric pressure
Semiconductor lasers
Chemical activation
Plasmas
Hydrogen
Oxygen
Substrates
Temperature
Thin films
Air
Costs

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Takigawa, R., Higurashi, E., Suga, T., & Sawada, R. (2009). Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation. In 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 (pp. 475-477). [5270708] (2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009). https://doi.org/10.1109/ICEPT.2009.5270708

Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation. / Takigawa, Ryo; Higurashi, Eiji; Suga, Tadatomo; Sawada, Renshi.

2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009. 2009. p. 475-477 5270708 (2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takigawa, R, Higurashi, E, Suga, T & Sawada, R 2009, Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation. in 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009., 5270708, 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009, pp. 475-477, 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009, Beijing, China, 8/10/09. https://doi.org/10.1109/ICEPT.2009.5270708
Takigawa R, Higurashi E, Suga T, Sawada R. Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation. In 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009. 2009. p. 475-477. 5270708. (2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009). https://doi.org/10.1109/ICEPT.2009.5270708
Takigawa, Ryo ; Higurashi, Eiji ; Suga, Tadatomo ; Sawada, Renshi. / Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation. 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009. 2009. pp. 475-477 (2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009).
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