Low-temperature bonding of laser diode chips on Si substrates with oxygen and hydrogen atmospheric-pressure plasma activation

Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Surface activated bonding (SAB) method with atmospheric-pressure plasma treatment is an effective approach to develop low cost, low damage, and low temperature bonding technology. In this research, not only conventional low-pressure plasma treatment (Ar RF plasma) but also atmospheric-pressure plasma treatment (Ar+O2, Ar+H2) was investigated for low-temperature Au-Au surface-activated bonding (150°C). In the case of Au thin film to Au thin film bonding, enough bonding strength was not obtained with Ar+O2 atmospheric-pressure plasma treatment due to Au 2O3 formed on Au surface. However, by using Au microbump (diameter at the top: 5 μm, height: 2 μm, and pitch: 10 μm), strong bonding strength was obtained with all these plasmas. Semiconductor laser diodes chips were successfully bonded to Si substrates wiht Au microbumps at low temperature (150°C) in ambient air using Ar+H2 atmospheric-pressure plasma treatment.

Original languageEnglish
Title of host publication2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Pages475-477
Number of pages3
DOIs
Publication statusPublished - Nov 25 2009
Event2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 - Beijing, China
Duration: Aug 10 2009Aug 13 2009

Publication series

Name2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009

Other

Other2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
CountryChina
CityBeijing
Period8/10/098/13/09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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