Low-temperature bonding of laser diode chips on silicon substrates using plasma activation of Au films

Eiji Higurashi, Teppei Imamura, Tadatomo Suga, Renshi Sawada

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    94 Citations (Scopus)

    Abstract

    A low-temperature bonding of vertical-cavity surface-emitting laser (VCSEL) chips on Si substrates was achieved by using plasma activation of Au films. After the surfaces of Au films were cleaned using an Ar radio frequency plasma, bonding was carried out by contact in ambient air with applied static pressure. The experimental results showed that surface morphological change (the reduction of asperity width) as well as removal of adsorbed organic contaminants by plasma treatment significantly improved the quality of joints. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

    Original languageEnglish
    Pages (from-to)1994-1996
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume19
    Issue number24
    DOIs
    Publication statusPublished - Dec 15 2007

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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