Abstract
Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.
| Original language | English |
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| Title of host publication | 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 |
| DOIs | |
| Publication status | Published - Dec 1 2012 |
| Event | 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan Duration: Dec 10 2012 → Dec 12 2012 |
Other
| Other | 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 12/10/12 → 12/12/12 |
All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
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Yamamoto, M., Sato, T., Higurashi, E., Suga, T., & Sawada, R. (2012). Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. In 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 [6523387] https://doi.org/10.1109/ICSJ.2012.6523387