Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

Michitaka Yamamoto, Takeshi Sato, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.

Original languageEnglish
Title of host publication2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
DOIs
Publication statusPublished - Dec 1 2012
Event2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan
Duration: Dec 10 2012Dec 12 2012

Other

Other2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
CountryJapan
CityKyoto
Period12/10/1212/12/12

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Yamamoto, M., Sato, T., Higurashi, E., Suga, T., & Sawada, R. (2012). Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. In 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 [6523387] https://doi.org/10.1109/ICSJ.2012.6523387