Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

Michitaka Yamamoto; Takeshi Sato; Eiji Higurashi; Tadatomo Suga; Renshi Sawada

doi:10.1109/ICSJ.2012.6523387

Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

Michitaka Yamamoto, Takeshi Sato, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O₂ or Ar+H₂ atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.

Original language	English
Title of host publication	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
DOIs	https://doi.org/10.1109/ICSJ.2012.6523387
Publication status	Published - Dec 1 2012
Event	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan Duration: Dec 10 2012 → Dec 12 2012

Other

Other	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
Country	Japan
City	Kyoto
Period	12/10/12 → 12/12/12

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. / Yamamoto, Michitaka; Sato, Takeshi; Higurashi, Eiji; Suga, Tadatomo; Sawada, Renshi.

2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012. 2012. 6523387.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, M, Sato, T, Higurashi, E, Suga, T & Sawada, R 2012, Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. in 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012., 6523387, 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012, Kyoto, Japan, 12/10/12. https://doi.org/10.1109/ICSJ.2012.6523387

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abstract = "Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.",

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AU - Yamamoto, Michitaka

AU - Sato, Takeshi

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AU - Sawada, Renshi

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AB - Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.

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Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

Abstract

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