Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

Michitaka Yamamoto, Takeshi Sato, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.

Original languageEnglish
Title of host publication2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
DOIs
Publication statusPublished - Dec 1 2012
Event2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan
Duration: Dec 10 2012Dec 12 2012

Other

Other2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
CountryJapan
CityKyoto
Period12/10/1212/12/12

Fingerprint

Atmospheric pressure
Semiconductor lasers
Chemical activation
Plasmas
Current voltage characteristics
Temperature
Degradation
Thin films
Electrodes
Air

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Yamamoto, M., Sato, T., Higurashi, E., Suga, T., & Sawada, R. (2012). Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. In 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 [6523387] https://doi.org/10.1109/ICSJ.2012.6523387

Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. / Yamamoto, Michitaka; Sato, Takeshi; Higurashi, Eiji; Suga, Tadatomo; Sawada, Renshi.

2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012. 2012. 6523387.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamamoto, M, Sato, T, Higurashi, E, Suga, T & Sawada, R 2012, Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. in 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012., 6523387, 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012, Kyoto, Japan, 12/10/12. https://doi.org/10.1109/ICSJ.2012.6523387
Yamamoto, Michitaka ; Sato, Takeshi ; Higurashi, Eiji ; Suga, Tadatomo ; Sawada, Renshi. / Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012. 2012.
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