Abstract
Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.
| Original language | English |
|---|---|
| Title of host publication | 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 |
| DOIs | |
| Publication status | Published - Dec 1 2012 |
| Event | 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan Duration: Dec 10 2012 → Dec 12 2012 |
Other
| Other | 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 12/10/12 → 12/12/12 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. / Yamamoto, Michitaka; Sato, Takeshi; Higurashi, Eiji; Suga, Tadatomo; Sawada, Renshi.
2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012. 2012. 6523387.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces
AU - Yamamoto, Michitaka
AU - Sato, Takeshi
AU - Higurashi, Eiji
AU - Suga, Tadatomo
AU - Sawada, Renshi
PY - 2012/12/1
Y1 - 2012/12/1
N2 - Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.
AB - Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.
UR - http://www.scopus.com/inward/record.url?scp=84879773698&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879773698&partnerID=8YFLogxK
U2 - 10.1109/ICSJ.2012.6523387
DO - 10.1109/ICSJ.2012.6523387
M3 - Conference contribution
AN - SCOPUS:84879773698
SN - 9781467326551
BT - 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
ER -