Low-temperature bonding of LSI chips to PEN film using Au cone bump for heterogeneous integration

Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show that interconnection bonding of LSI chip to metallization on polyethylene naphthalate) (PEN) film can be realized by using cone-shaped compliant bump. We have investigated two designs of the counter electrode. One is simple metal pad electrode and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room-temperature bonding was achieved.

Original languageEnglish
Title of host publication2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
DOIs
Publication statusPublished - Dec 1 2011
Event2011 IEEE International 3D Systems Integration Conference, 3DIC 2011 - Osaka, Japan
Duration: Jan 31 2012Feb 2 2012

Publication series

Name2011 IEEE International 3D Systems Integration Conference, 3DIC 2011

Other

Other2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
CountryJapan
CityOsaka
Period1/31/122/2/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering

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    Shuto, T., Watanabe, N., Ikeda, A., & Asano, T. (2011). Low-temperature bonding of LSI chips to PEN film using Au cone bump for heterogeneous integration. In 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011 [6263012] (2011 IEEE International 3D Systems Integration Conference, 3DIC 2011). https://doi.org/10.1109/3DIC.2012.6263012