Abstract
PEN (polyethylene naphthalate) is a promising polymer candidate of the substrate material for flexible electronics. But its glass transition temperature is as low as 150°C. We show that interconnection bonding of LSI chip to metallization on PEN film can be realized by using cone-shaped compliant bump. 20 um-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. Counter electrode on the PEN film was composed of Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by using electroless plating on patterned Al. We have investigated two designs of the counter electrode; one is simple metal pad and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room temperature bonding was achieved.
Original language | English |
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Title of host publication | 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011 |
Pages | 1770-1774 |
Number of pages | 5 |
DOIs | |
Publication status | Published - 2011 |
Event | 2011 61st Electronic Components and Technology Conference, ECTC 2011 - Lake Buena Vista, FL, United States Duration: May 31 2011 → Jun 3 2011 |
Other
Other | 2011 61st Electronic Components and Technology Conference, ECTC 2011 |
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Country/Territory | United States |
City | Lake Buena Vista, FL |
Period | 5/31/11 → 6/3/11 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials