Low-temperature bonding of LSI chips to polymer substrate using Au cone bump for flexible electronics

Takanori Shuto; Naoya Watanabe; Akihiro Ikeda; Tanemasa Asano

doi:10.1109/ECTC.2011.5898752

Low-temperature bonding of LSI chips to polymer substrate using Au cone bump for flexible electronics

Takanori Shuto, Naoya Watanabe, Akihiro Ikeda, Tanemasa Asano

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

PEN (polyethylene naphthalate) is a promising polymer candidate of the substrate material for flexible electronics. But its glass transition temperature is as low as 150°C. We show that interconnection bonding of LSI chip to metallization on PEN film can be realized by using cone-shaped compliant bump. 20 um-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. Counter electrode on the PEN film was composed of Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by using electroless plating on patterned Al. We have investigated two designs of the counter electrode; one is simple metal pad and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room temperature bonding was achieved.

Original language	English
Title of host publication	2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011
Pages	1770-1774
Number of pages	5
DOIs	https://doi.org/10.1109/ECTC.2011.5898752
Publication status	Published - 2011
Event	2011 61st Electronic Components and Technology Conference, ECTC 2011 - Lake Buena Vista, FL, United States Duration: May 31 2011 → Jun 3 2011

Other

Other	2011 61st Electronic Components and Technology Conference, ECTC 2011
Country	United States
City	Lake Buena Vista, FL
Period	5/31/11 → 6/3/11

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ECTC.2011.5898752

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Cite this

Shuto, T., Watanabe, N., Ikeda, A., & Asano, T. (2011). Low-temperature bonding of LSI chips to polymer substrate using Au cone bump for flexible electronics. In 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011 (pp. 1770-1774). [5898752] https://doi.org/10.1109/ECTC.2011.5898752

Shuto, T, Watanabe, N, Ikeda, A & Asano, T 2011, Low-temperature bonding of LSI chips to polymer substrate using Au cone bump for flexible electronics. in 2011 IEEE 61st Electronic Components and Technology Conference, ECTC 2011., 5898752, pp. 1770-1774, 2011 61st Electronic Components and Technology Conference, ECTC 2011, Lake Buena Vista, FL, United States, 5/31/11. https://doi.org/10.1109/ECTC.2011.5898752

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title = "Low-temperature bonding of LSI chips to polymer substrate using Au cone bump for flexible electronics",

abstract = "PEN (polyethylene naphthalate) is a promising polymer candidate of the substrate material for flexible electronics. But its glass transition temperature is as low as 150°C. We show that interconnection bonding of LSI chip to metallization on PEN film can be realized by using cone-shaped compliant bump. 20 um-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. Counter electrode on the PEN film was composed of Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by using electroless plating on patterned Al. We have investigated two designs of the counter electrode; one is simple metal pad and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room temperature bonding was achieved.",

author = "Takanori Shuto and Naoya Watanabe and Akihiro Ikeda and Tanemasa Asano",

year = "2011",

doi = "10.1109/ECTC.2011.5898752",

language = "English",

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pages = "1770--1774",

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note = "2011 61st Electronic Components and Technology Conference, ECTC 2011 ; Conference date: 31-05-2011 Through 03-06-2011",

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AU - Ikeda, Akihiro

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N2 - PEN (polyethylene naphthalate) is a promising polymer candidate of the substrate material for flexible electronics. But its glass transition temperature is as low as 150°C. We show that interconnection bonding of LSI chip to metallization on PEN film can be realized by using cone-shaped compliant bump. 20 um-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. Counter electrode on the PEN film was composed of Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by using electroless plating on patterned Al. We have investigated two designs of the counter electrode; one is simple metal pad and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room temperature bonding was achieved.

AB - PEN (polyethylene naphthalate) is a promising polymer candidate of the substrate material for flexible electronics. But its glass transition temperature is as low as 150°C. We show that interconnection bonding of LSI chip to metallization on PEN film can be realized by using cone-shaped compliant bump. 20 um-pitch area array of cone-shaped Au bump was fabricated on a Si wafer by using a photolithography and electroplating. Counter electrode on the PEN film was composed of Au (top)/Ni/Al (bottom) layered structure, where Ni and Au layers were deposited by using electroless plating on patterned Al. We have investigated two designs of the counter electrode; one is simple metal pad and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room temperature bonding was achieved.

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T2 - 2011 61st Electronic Components and Technology Conference, ECTC 2011

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