Low-temperature bonding of optical chips using coined Au stud bumps and its application to micro laser Doppler velocimeter

Michitaka Yamamoto; Takeshi Sato; Eiji Higurashi; Tadatomo Suga; Renshi Sawada

doi:10.1109/LTB-3D.2012.6238061

Low-temperature bonding of optical chips using coined Au stud bumps and its application to micro laser Doppler velocimeter

Michitaka Yamamoto, Takeshi Sato, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Surface activated bonding of laser diode (LD) chips on coined Au stud bumps (thickness: 10∼15 μm) with smooth surfaces (R _a < 3.5 nm) was demonstrated for optical microsensor applications. Bonding of LD chips with Au thin films to the Au stud bumps on the Si substrates was performed in ambient air at low temperature (150 °C). Die-shear strength per unit area was three times as high as that obtained between Au thin films (thickness: 0.5 μm). Using this technique, compact and thin micro laser Doppler velocimeter (2.8 mm ×2.8 mm ×1 mm thick) was developed. The feasibility of measuring velocity was demonstrated for a moving Au wire (diameter: 22 μm).

Original language	English
Title of host publication	Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Number of pages	1
DOIs	https://doi.org/10.1109/LTB-3D.2012.6238061
Publication status	Published - Aug 15 2012
Event	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan Duration: May 22 2012 → May 23 2012

Other

Other	2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Country/Territory	Japan
City	Tokyo
Period	5/22/12 → 5/23/12

All Science Journal Classification (ASJC) codes

Computer Graphics and Computer-Aided Design
Computer Vision and Pattern Recognition

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10.1109/LTB-3D.2012.6238061

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Low-temperature bonding of optical chips using coined Au stud bumps and its application to micro laser Doppler velocimeter. / Yamamoto, Michitaka; Sato, Takeshi; Higurashi, Eiji et al.

Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012. 2012. 6238061.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, M, Sato, T, Higurashi, E, Suga, T & Sawada, R 2012, Low-temperature bonding of optical chips using coined Au stud bumps and its application to micro laser Doppler velocimeter. in Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012., 6238061, 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012, Tokyo, Japan, 5/22/12. https://doi.org/10.1109/LTB-3D.2012.6238061

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abstract = "Surface activated bonding of laser diode (LD) chips on coined Au stud bumps (thickness: 10∼15 μm) with smooth surfaces (R a < 3.5 nm) was demonstrated for optical microsensor applications. Bonding of LD chips with Au thin films to the Au stud bumps on the Si substrates was performed in ambient air at low temperature (150 °C). Die-shear strength per unit area was three times as high as that obtained between Au thin films (thickness: 0.5 μm). Using this technique, compact and thin micro laser Doppler velocimeter (2.8 mm ×2.8 mm ×1 mm thick) was developed. The feasibility of measuring velocity was demonstrated for a moving Au wire (diameter: 22 μm).",

author = "Michitaka Yamamoto and Takeshi Sato and Eiji Higurashi and Tadatomo Suga and Renshi Sawada",

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doi = "10.1109/LTB-3D.2012.6238061",

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AU - Yamamoto, Michitaka

AU - Sato, Takeshi

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AU - Suga, Tadatomo

AU - Sawada, Renshi

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N2 - Surface activated bonding of laser diode (LD) chips on coined Au stud bumps (thickness: 10∼15 μm) with smooth surfaces (R a < 3.5 nm) was demonstrated for optical microsensor applications. Bonding of LD chips with Au thin films to the Au stud bumps on the Si substrates was performed in ambient air at low temperature (150 °C). Die-shear strength per unit area was three times as high as that obtained between Au thin films (thickness: 0.5 μm). Using this technique, compact and thin micro laser Doppler velocimeter (2.8 mm ×2.8 mm ×1 mm thick) was developed. The feasibility of measuring velocity was demonstrated for a moving Au wire (diameter: 22 μm).

AB - Surface activated bonding of laser diode (LD) chips on coined Au stud bumps (thickness: 10∼15 μm) with smooth surfaces (R a < 3.5 nm) was demonstrated for optical microsensor applications. Bonding of LD chips with Au thin films to the Au stud bumps on the Si substrates was performed in ambient air at low temperature (150 °C). Die-shear strength per unit area was three times as high as that obtained between Au thin films (thickness: 0.5 μm). Using this technique, compact and thin micro laser Doppler velocimeter (2.8 mm ×2.8 mm ×1 mm thick) was developed. The feasibility of measuring velocity was demonstrated for a moving Au wire (diameter: 22 μm).

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Low-temperature bonding of optical chips using coined Au stud bumps and its application to micro laser Doppler velocimeter

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