Low-temperature bonding of optical chips using coined Au stud bumps and its application to micro laser Doppler velocimeter

Michitaka Yamamoto, Takeshi Sato, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Surface activated bonding of laser diode (LD) chips on coined Au stud bumps (thickness: 10∼15 μm) with smooth surfaces (R a < 3.5 nm) was demonstrated for optical microsensor applications. Bonding of LD chips with Au thin films to the Au stud bumps on the Si substrates was performed in ambient air at low temperature (150 °C). Die-shear strength per unit area was three times as high as that obtained between Au thin films (thickness: 0.5 μm). Using this technique, compact and thin micro laser Doppler velocimeter (2.8 mm ×2.8 mm ×1 mm thick) was developed. The feasibility of measuring velocity was demonstrated for a moving Au wire (diameter: 22 μm).

Original languageEnglish
Title of host publicationProceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
Number of pages1
DOIs
Publication statusPublished - Aug 15 2012
Event2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 - Tokyo, Japan
Duration: May 22 2012May 23 2012

Other

Other2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012
CountryJapan
CityTokyo
Period5/22/125/23/12

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All Science Journal Classification (ASJC) codes

  • Computer Graphics and Computer-Aided Design
  • Computer Vision and Pattern Recognition

Cite this

Yamamoto, M., Sato, T., Higurashi, E., Suga, T., & Sawada, R. (2012). Low-temperature bonding of optical chips using coined Au stud bumps and its application to micro laser Doppler velocimeter. In Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 [6238061] https://doi.org/10.1109/LTB-3D.2012.6238061