Low-temperature carrier transport properties of n-type ultrananocrystalline diamond/p-type Si heterojunction diodes

Abdelrahman Zkria, Tsuyoshi Yoshitake

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The possible conduction mechanisms that govern current transport in these devices were analyzed from dark current-voltage characteristics measured in temperature range of 300 down to 80 K. Electrical parameters of the diode such as ideality factor and barrier height were found to be strongly temperature dependent. At moderate forward bias voltages, the current follows a power-law dependence, which is generally attributed to a space-charge-limited-current conduction mechanism for single-carrier (electron) injection behavior. This junction behavior might be attributed to existence of large number of grain boundaries in the UNCD/a-C:H film that provides active centers for carrier recombination-tunneling processes at the junction interface.

    Original languageEnglish
    Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781509019649
    DOIs
    Publication statusPublished - Aug 1 2016
    Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
    Duration: Jun 26 2016Jun 30 2016

    Other

    Other2016 Compound Semiconductor Week, CSW 2016
    CountryJapan
    CityToyama
    Period6/26/166/30/16

    Fingerprint

    Diamond
    Carrier transport
    Transport properties
    Heterojunctions
    Diamonds
    Diodes
    Nitrogen
    Plasma deposition
    Electron injection
    Dark currents
    Amorphous carbon
    Current voltage characteristics
    Bias voltage
    Electric space charge
    Temperature
    Hydrogen
    Grain boundaries
    Gases
    Composite materials
    Substrates

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    Cite this

    Zkria, A., & Yoshitake, T. (2016). Low-temperature carrier transport properties of n-type ultrananocrystalline diamond/p-type Si heterojunction diodes. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528695] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528695

    Low-temperature carrier transport properties of n-type ultrananocrystalline diamond/p-type Si heterojunction diodes. / Zkria, Abdelrahman; Yoshitake, Tsuyoshi.

    2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528695.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Zkria, A & Yoshitake, T 2016, Low-temperature carrier transport properties of n-type ultrananocrystalline diamond/p-type Si heterojunction diodes. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528695, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 6/26/16. https://doi.org/10.1109/ICIPRM.2016.7528695
    Zkria A, Yoshitake T. Low-temperature carrier transport properties of n-type ultrananocrystalline diamond/p-type Si heterojunction diodes. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528695 https://doi.org/10.1109/ICIPRM.2016.7528695
    Zkria, Abdelrahman ; Yoshitake, Tsuyoshi. / Low-temperature carrier transport properties of n-type ultrananocrystalline diamond/p-type Si heterojunction diodes. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016.
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    abstract = "PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The possible conduction mechanisms that govern current transport in these devices were analyzed from dark current-voltage characteristics measured in temperature range of 300 down to 80 K. Electrical parameters of the diode such as ideality factor and barrier height were found to be strongly temperature dependent. At moderate forward bias voltages, the current follows a power-law dependence, which is generally attributed to a space-charge-limited-current conduction mechanism for single-carrier (electron) injection behavior. This junction behavior might be attributed to existence of large number of grain boundaries in the UNCD/a-C:H film that provides active centers for carrier recombination-tunneling processes at the junction interface.",
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    AU - Yoshitake, Tsuyoshi

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    N2 - PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The possible conduction mechanisms that govern current transport in these devices were analyzed from dark current-voltage characteristics measured in temperature range of 300 down to 80 K. Electrical parameters of the diode such as ideality factor and barrier height were found to be strongly temperature dependent. At moderate forward bias voltages, the current follows a power-law dependence, which is generally attributed to a space-charge-limited-current conduction mechanism for single-carrier (electron) injection behavior. This junction behavior might be attributed to existence of large number of grain boundaries in the UNCD/a-C:H film that provides active centers for carrier recombination-tunneling processes at the junction interface.

    AB - PN heterojunctions comprised of n-type nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films deposited on p-type Si substrates were fabricated in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition. The heterojunction devices showed typical rectification properties similar to those observed for conventional abrupt pn heterojunctions. The possible conduction mechanisms that govern current transport in these devices were analyzed from dark current-voltage characteristics measured in temperature range of 300 down to 80 K. Electrical parameters of the diode such as ideality factor and barrier height were found to be strongly temperature dependent. At moderate forward bias voltages, the current follows a power-law dependence, which is generally attributed to a space-charge-limited-current conduction mechanism for single-carrier (electron) injection behavior. This junction behavior might be attributed to existence of large number of grain boundaries in the UNCD/a-C:H film that provides active centers for carrier recombination-tunneling processes at the junction interface.

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