Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.
|Number of pages||14|
|Publication status||Published - Dec 1 2006|
|Event||SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: Oct 29 2006 → Nov 3 2006
All Science Journal Classification (ASJC) codes