Abstract
Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.
| Original language | English |
|---|---|
| Pages (from-to) | 613-626 |
| Number of pages | 14 |
| Journal | ECS Transactions |
| Volume | 3 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Dec 1 2006 |
| Event | SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Low temperature crystallization of a-SiGe on insulating films for thin film transistor application. / Miyao, Masanobu; Kanno, Hiroshi; Tsunoda, Isao; Sadoh, Taizoh.
In: ECS Transactions, Vol. 3, No. 7, 01.12.2006, p. 613-626.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - Low temperature crystallization of a-SiGe on insulating films for thin film transistor application
AU - Miyao, Masanobu
AU - Kanno, Hiroshi
AU - Tsunoda, Isao
AU - Sadoh, Taizoh
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.
AB - Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.
UR - http://www.scopus.com/inward/record.url?scp=33846996398&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846996398&partnerID=8YFLogxK
U2 - 10.1149/1.2355858
DO - 10.1149/1.2355858
M3 - Conference article
AN - SCOPUS:33846996398
VL - 3
SP - 613
EP - 626
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 7
ER -