Low temperature crystallization of a-SiGe on insulating films for thin film transistor application

Masanobu Miyao, Hiroshi Kanno, Isao Tsunoda, Taizoh Sadoh

Research output: Contribution to journalConference articlepeer-review

Abstract

Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)613-626
Number of pages14
JournalECS Transactions
Volume3
Issue number7
DOIs
Publication statusPublished - Dec 1 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: Oct 29 2006Nov 3 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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