Low temperature crystallization of a-SiGe on insulating films for thin film transistor application

Masanobu Miyao; Hiroshi Kanno; Isao Tsunoda; Taizoh Sadoh

doi:10.1149/1.2355858

Low temperature crystallization of a-SiGe on insulating films for thin film transistor application

Masanobu Miyao, Hiroshi Kanno, Isao Tsunoda, Taizoh Sadoh

Electronic Devices

Research output: Contribution to journal › Conference article › peer-review

Abstract

Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.

Original language	English
Pages (from-to)	613-626
Number of pages	14
Journal	ECS Transactions
Volume	3
Issue number	7
DOIs	https://doi.org/10.1149/1.2355858
Publication status	Published - Dec 1 2006
Event	SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico Duration: Oct 29 2006 → Nov 3 2006

All Science Journal Classification (ASJC) codes

Engineering(all)

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title = "Low temperature crystallization of a-SiGe on insulating films for thin film transistor application",

abstract = "Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.",

author = "Masanobu Miyao and Hiroshi Kanno and Isao Tsunoda and Taizoh Sadoh",

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AU - Miyao, Masanobu

AU - Kanno, Hiroshi

AU - Tsunoda, Isao

AU - Sadoh, Taizoh

PY - 2006/12/1

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N2 - Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.

AB - Development of high-mobility semiconductors is strongly needed to realize high-performance thin-film transistors. To achieve this, we have been investigating low temperature solid-phase crystallization and metal-induced lateral crystallization of a-SiGe on insulating substrates. These realize uniform crystal growth of SiGe with all Ge fractions. In addition, thin-film transistors with Schottky source and drain structures were fabricated, which showed good ambipolar operation characteristics. Present paper reviews such our recent progress of low temperature SiGe growth and discusses the possible application to thin-film transistors with high speed operation. copyright The Electrochemical Society.

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