Low-temperature defect chemistry of oxides. II. Analytical relations

K. Sasaki, J. Maier

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The low-temperature defect chemistry of oxides is considered, characterized by frozen-in interaction with the ambient oxygen and reversibility of internal interactions, in particular the redistribution of electronic carriers. Analytical relations describing ionic and electronic defect concentrations are derived for various conditions. The presence of redox-active, i.e., deep-level, dopants proves to be of special interest in this context. The analytical relations permit the detailed discussion of the dependencies of the charge carrier concentrations on the control parameters. Such analytical relations are useful for understanding and tailoring defect concentrations and thus related properties of electroceramics.

Original languageEnglish
Pages (from-to)5434-5443
Number of pages10
JournalJournal of Applied Physics
Volume86
Issue number10
DOIs
Publication statusPublished - Nov 15 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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