Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

H. Nakashima, K. Furukawa, Y. C. Liu, D. W. Gao, Y. Kashiwazaki, K. Muraoka, K. Shibata, T. Tsurushima

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    21 Citations (Scopus)

    Abstract

    High-quality silicon dioxide films have been deposited at 130°C by a sputtering technique using an electron cyclotron resonance microwave plasma. Film properties have been studied as a function of O2 flow rate in the range of 2-8 sccm with a constant Ar flow rate of 8 sccm when other plasma conditions were a microwave power of 700 W, and a radio frequency power of 700 W supplied to a target for sputtering. Dielectric breakdown characteristics have been investigated by ramp current-voltage measurements. Films deposited with an O2 flow rate of 5.3 sccm have a dielectric breakdown field of 10 MV/cm, which is close to that of thermally grown silicon dioxide film. The deposition rate was as high as 23 nm/min. Structural properties of films have also been characterized by ellipsometry and infrared absorption spectroscopy, showing that films with O2 flow rates above 4 sccm have near-stoichiometric composition.

    Original languageEnglish
    Pages (from-to)1951-1954
    Number of pages4
    JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
    Volume15
    Issue number4
    DOIs
    Publication statusPublished - 1997

    All Science Journal Classification (ASJC) codes

    • Condensed Matter Physics
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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