Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate

T. Imamura, E. Higurashi, T. Suga, R. Sawada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    This paper describes the result of low temperature direct metal bonding of vertical-cavity surface-emitting laser (VCSEL) for flip-chip mounting to Si substrate by surface activated bonding (SAB) method. In the SAB process, radio frequency (RF) driven, low-pressure argon (Ar) plasma was used to clean the surfaces to be bonded. After organic contaminants on the surfaces of Au electrodes of the VCSEL and Si substrate were removed by Ar RF plasma, Au-Au direct bonding was carried out in the ambient air. The high die-shear strength of 84 MPa (77.4 gf) was achieved at a bonding temperature of 150°C. Therefore, Au SAB bonding in the ambient air can be applied to realize low cost and highly functional optical microsystems.

    Original languageEnglish
    Title of host publication2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers
    Pages185-188
    Number of pages4
    DOIs
    Publication statusPublished - Dec 1 2006
    Event2006 International Microsystems, Packaging, Assembly Conference Taiwan, IMPACT - Taipei, Taiwan, Province of China
    Duration: Oct 18 2006Oct 20 2006

    Publication series

    Name2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers

    Other

    Other2006 International Microsystems, Packaging, Assembly Conference Taiwan, IMPACT
    CountryTaiwan, Province of China
    CityTaipei
    Period10/18/0610/20/06

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering

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