Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate

T. Imamura; E. Higurashi; T. Suga; R. Sawada

doi:10.1109/IMPACT.2006.312175

Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate

T. Imamura, E. Higurashi, T. Suga, R. Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper describes the result of low temperature direct metal bonding of vertical-cavity surface-emitting laser (VCSEL) for flip-chip mounting to Si substrate by surface activated bonding (SAB) method. In the SAB process, radio frequency (RF) driven, low-pressure argon (Ar) plasma was used to clean the surfaces to be bonded. After organic contaminants on the surfaces of Au electrodes of the VCSEL and Si substrate were removed by Ar RF plasma, Au-Au direct bonding was carried out in the ambient air. The high die-shear strength of 84 MPa (77.4 gf) was achieved at a bonding temperature of 150°C. Therefore, Au SAB bonding in the ambient air can be applied to realize low cost and highly functional optical microsystems.

Original language	English
Title of host publication	2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers
Pages	185-188
Number of pages	4
DOIs	https://doi.org/10.1109/IMPACT.2006.312175
Publication status	Published - Dec 1 2006
Event	2006 International Microsystems, Packaging, Assembly Conference Taiwan, IMPACT - Taipei, Taiwan, Province of China Duration: Oct 18 2006 → Oct 20 2006

Publication series

Name	2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers

Other

Other	2006 International Microsystems, Packaging, Assembly Conference Taiwan, IMPACT
Country/Territory	Taiwan, Province of China
City	Taipei
Period	10/18/06 → 10/20/06

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/IMPACT.2006.312175

Cite this

Imamura, T., Higurashi, E., Suga, T., & Sawada, R. (2006). Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate. In 2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers (pp. 185-188). [4107477] (2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers). https://doi.org/10.1109/IMPACT.2006.312175

Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate. / Imamura, T.; Higurashi, E.; Suga, T. et al.
2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers. 2006. p. 185-188 4107477 (2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Imamura, T, Higurashi, E, Suga, T & Sawada, R 2006, Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate. in 2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers., 4107477, 2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers, pp. 185-188, 2006 International Microsystems, Packaging, Assembly Conference Taiwan, IMPACT, Taipei, Taiwan, Province of China, 10/18/06. https://doi.org/10.1109/IMPACT.2006.312175

Imamura T, Higurashi E, Suga T, Sawada R. Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate. In 2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers. 2006. p. 185-188. 4107477. (2006 International Microsystems, Packaging,Assembly Conference Taiwan, IMPACT - Proceedings of Technical Papers). doi: 10.1109/IMPACT.2006.312175

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Low temperature direct bonding of flip-chip mounting VCSEL to Si substrate

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