Low-temperature direct flip-chip bonding for integrated micro-systems

E. Higurashi, T. Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

Original languageEnglish
Title of host publication18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Pages121-122
Number of pages2
Volume2005
DOIs
Publication statusPublished - 2005
Event18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia
Duration: Oct 22 2005Oct 28 2005

Other

Other18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
CountryAustralia
CitySydney
Period10/22/0510/28/05

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All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Higurashi, E., Suga, T., & Sawada, R. (2005). Low-temperature direct flip-chip bonding for integrated micro-systems. In 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 (Vol. 2005, pp. 121-122). [1547908] https://doi.org/10.1109/LEOS.2005.1547908