Low-temperature direct flip-chip bonding for integrated micro-systems

E. Higurashi; T. Suga; Renshi Sawada

doi:10.1109/LEOS.2005.1547908

Low-temperature direct flip-chip bonding for integrated micro-systems

E. Higurashi, T. Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

Original language	English
Title of host publication	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Pages	121-122
Number of pages	2
Volume	2005
DOIs	https://doi.org/10.1109/LEOS.2005.1547908
Publication status	Published - 2005
Event	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia Duration: Oct 22 2005 → Oct 28 2005

Other

Other	18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
Country/Territory	Australia
City	Sydney
Period	10/22/05 → 10/28/05

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/LEOS.2005.1547908

Cite this

Higurashi, E, Suga, T & Sawada, R 2005, Low-temperature direct flip-chip bonding for integrated micro-systems. in 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005. vol. 2005, 1547908, pp. 121-122, 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005, Sydney, Australia, 10/22/05. https://doi.org/10.1109/LEOS.2005.1547908

@inproceedings{eb412f7f2e8246ab894b3e074437512b,

title = "Low-temperature direct flip-chip bonding for integrated micro-systems",

abstract = "This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.",

author = "E. Higurashi and T. Suga and Renshi Sawada",

year = "2005",

doi = "10.1109/LEOS.2005.1547908",

language = "English",

isbn = "0780392175",

volume = "2005",

pages = "121--122",

booktitle = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005",

note = "18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 ; Conference date: 22-10-2005 Through 28-10-2005",

}

TY - GEN

T1 - Low-temperature direct flip-chip bonding for integrated micro-systems

AU - Higurashi, E.

AU - Suga, T.

AU - Sawada, Renshi

PY - 2005

Y1 - 2005

N2 - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

AB - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

UR - http://www.scopus.com/inward/record.url?scp=33751323440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751323440&partnerID=8YFLogxK

U2 - 10.1109/LEOS.2005.1547908

DO - 10.1109/LEOS.2005.1547908

M3 - Conference contribution

AN - SCOPUS:33751323440

SN - 0780392175

SN - 9780780392175

VL - 2005

SP - 121

EP - 122

BT - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

T2 - 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005

Y2 - 22 October 2005 through 28 October 2005

ER -

Low-temperature direct flip-chip bonding for integrated micro-systems

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this