Abstract
This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
Original language | English |
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Title of host publication | 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 |
Pages | 121-122 |
Number of pages | 2 |
Volume | 2005 |
DOIs | |
Publication status | Published - 2005 |
Event | 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia Duration: Oct 22 2005 → Oct 28 2005 |
Other
Other | 18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 |
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Country/Territory | Australia |
City | Sydney |
Period | 10/22/05 → 10/28/05 |
All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
- Control and Systems Engineering
- Electrical and Electronic Engineering