Low-temperature direct flip-chip bonding for integrated micro-systems

E. Higurashi, T. Suga, Renshi Sawada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

    Original languageEnglish
    Title of host publication18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
    Pages121-122
    Number of pages2
    Volume2005
    DOIs
    Publication statusPublished - 2005
    Event18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005 - Sydney, Australia
    Duration: Oct 22 2005Oct 28 2005

    Other

    Other18th Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2005
    CountryAustralia
    CitySydney
    Period10/22/0510/28/05

    All Science Journal Classification (ASJC) codes

    • Industrial and Manufacturing Engineering
    • Control and Systems Engineering
    • Electrical and Electronic Engineering

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