Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 films

Koji Ueda, Mamoru Kumano, Taizoh Sadoh, Masanobu Miyao

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3 Citations (Scopus)


Growth of ferromagnetic silicide Fe3Si on SiO2 was investigated by using the molecular beam deposition technique. Measurements combined with X-ray diffraction and reflective high-energy electron diffraction clearly indicated that poly-crystal Fe3Si layers were formed on Si(111) substrates covered with thick (> 2.7 nm) SiO2 films. On the other hand, it is suggested that Fe3Si layers were epitaxially grown on Si(111) substrates covered with ultra-thin (1.3 nm) SiO2 films. Transmission electron microscopy and electron diffraction measurements confirmed that single crystalline Fe3Si layers with (111) orientation were formed on Si(111) substrates with ultra-thin (1.3 nm) SiO2 films. These results were considered to originate from heteroepitaxy on crystalline ultra-thin SiO2 layer or lateral epitaxial growth over SiO2 through pinholes.

Original languageEnglish
Pages (from-to)425-427
Number of pages3
JournalThin Solid Films
Issue number1
Publication statusPublished - Nov 3 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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