Growth of ferromagnetic silicide Fe3Si on SiO2 was investigated by using the molecular beam deposition technique. Measurements combined with X-ray diffraction and reflective high-energy electron diffraction clearly indicated that poly-crystal Fe3Si layers were formed on Si(111) substrates covered with thick (> 2.7 nm) SiO2 films. On the other hand, it is suggested that Fe3Si layers were epitaxially grown on Si(111) substrates covered with ultra-thin (1.3 nm) SiO2 films. Transmission electron microscopy and electron diffraction measurements confirmed that single crystalline Fe3Si layers with (111) orientation were formed on Si(111) substrates with ultra-thin (1.3 nm) SiO2 films. These results were considered to originate from heteroepitaxy on crystalline ultra-thin SiO2 layer or lateral epitaxial growth over SiO2 through pinholes.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry