Low-temperature epitaxial growth of [Fe3Si/SiGe]n (n=1-2) multi-layered structures for spintronics application

T. Sadoh; K. Ueda; Y. Ando; M. Kumano; K. Narumi; Y. Maeda; M. Miyao

doi:10.1149/1.2778404

Low-temperature epitaxial growth of [Fe₃Si/SiGe]_n (n=1-2) multi-layered structures for spintronics application

T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, M. Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Our recent progresses in epitaxial growth of Fe₃Si on Ge substrates are reviewed. Single crystalline Fe₃Si layers with atomically flat interfaces were achieved on Ge(111) substrates by optimizing growth conditions at low temperatires (60-200°C), Thermal stability of it was guaranteed up to 400°C In addition, epitaxial growth of mixed layers composed of Fs₃Si, FeGe, and FeSi on Ge substrates at 400°C is reported. Finally, epitaxial growth of Fe₃Si/Ge/Fe₃Si/Ge structures is discussed. These results will be a powerful tool to open up SiGe related spintronics.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on ULSI Process Integration
Pages	473-479
Number of pages	7
Edition	6
DOIs	https://doi.org/10.1149/1.2778404
Publication status	Published - Dec 1 2007
Event	5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States Duration: Oct 7 2007 → Oct 12 2007

Publication series

Name	ECS Transactions
Number	6
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on ULSI Process Integration - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	10/7/07 → 10/12/07

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.2778404

Cite this

Low-temperature epitaxial growth of [Fe₃Si/SiGe]_n (n=1-2) multi-layered structures for spintronics application. / Sadoh, T.; Ueda, K.; Ando, Y. et al.
ECS Transactions - 5th International Symposium on ULSI Process Integration. 6. ed. 2007. p. 473-479 (ECS Transactions; Vol. 11, No. 6).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sadoh, T, Ueda, K, Ando, Y, Kumano, M, Narumi, K, Maeda, Y & Miyao, M 2007, Low-temperature epitaxial growth of [Fe₃Si/SiGe]_n (n=1-2) multi-layered structures for spintronics application. in ECS Transactions - 5th International Symposium on ULSI Process Integration. 6 edn, ECS Transactions, no. 6, vol. 11, pp. 473-479, 5th International Symposium on ULSI Process Integration - 212th ECS Meeting, Washington, DC, United States, 10/7/07. https://doi.org/10.1149/1.2778404

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