Low-temperature epitaxial growth of [Fe3Si/SiGe]n (n=1-2) multi-layered structures for spintronics application

T. Sadoh, K. Ueda, Y. Ando, M. Kumano, K. Narumi, Y. Maeda, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Our recent progresses in epitaxial growth of Fe3Si on Ge substrates are reviewed. Single crystalline Fe3Si layers with atomically flat interfaces were achieved on Ge(111) substrates by optimizing growth conditions at low temperatires (60-200°C), Thermal stability of it was guaranteed up to 400°C In addition, epitaxial growth of mixed layers composed of Fs3Si, FeGe, and FeSi on Ge substrates at 400°C is reported. Finally, epitaxial growth of Fe3Si/Ge/Fe3Si/Ge structures is discussed. These results will be a powerful tool to open up SiGe related spintronics.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages473-479
Number of pages7
Edition6
DOIs
Publication statusPublished - Dec 1 2007
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Publication series

NameECS Transactions
Number6
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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