Low temperature epitaxial growth of full heusler alloy Fe2MnSi on Ge(111) substrates for spintronics application

Koji Ueda, Yuichiro Ando, Kenji Yamamoto, Mamoru Kumano, Kohei Hamaya, Taizoh Sadoh, Kazumasa Nammi, Yoshihito Maeda, Masanobu Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low temperature epitaxial growth of the full Heusler alloy Fe 2MnSi layers on Ge(l 11) substrates has been investigated. RBS measurements revealed that good crystallinity of Fe2MnSi layers was realized at 200°C. In addition, a TEM image of a Fe2MnSi layer grown at 200°C demonstrated a very sharp interface. Moreover, identical symmetrical structures of electron diffraction patterns were obtained from the Fe2MnSi layer and the Ge substrate, which confirmed formation of a single crystalline epitaxial Fe2MnSi layer on Ge. These results will be very attractive for Si-based spintronics applications.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
Pages273-276
Number of pages4
Edition10
DOIs
Publication statusPublished - Dec 1 2008
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: Oct 12 2008Oct 17 2008

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period10/12/0810/17/08

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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