Low-temperature fabrication of polycrystalline Si thin film using Al-induced crystallization without native Al oxide at amorphous Si/Al interface

Youhei Sugimoto, Naoki Takata, Takeshi Hirota, Ken Ichi Ikeda, Fuyuki Yoshida, Hideharu Nakashima, Hiroshi Nakashima

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

Low-temperature fabrication of polycrystalline silicon (poly-Si) thin film has been performed by Al-induced crystallization (AIC), and the structural properties have been investigated. In our experiments, to prevent native oxidation of Al film, an amorphous silicon (a-Si)/Al bilayer was formed on the SiO2/Si substrate by electron beam evaporation without breaking the vacuum. The a-Si/Al/SiO2/Si structure was then heated at a low temperature of 400°C to induce AIC. It was confirmed that layer exchange of the a-Si/Al bilayer is induced even though there is no native oxidation of Al film, which was demonstrated by scanning transmission electron microscopy and energy dispersive X-ray analysis. The mechanism for layer exchange of the a-Si/Al bilayer has been discussed. Furthermore, it was verified by scanning electron microscopy and spectroscopic ellipsometry that the a-Si/Al thickness ratio of roughly 1 : 1 is suitable to achieve a flat surface morphology of poly-Si. In addition, it was found, by X-ray diffraction and orientation imaging microscopy, that the Si(111)-oriented grain becomes dominant with decreasing thickness of the a-Si/Al bilayer.

Original languageEnglish
Pages (from-to)4770-4775
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number7 A
DOIs
Publication statusPublished - Jul 8 2005

Fingerprint

Amorphous silicon
amorphous silicon
Crystallization
crystallization
Fabrication
Thin films
fabrication
Oxides
oxides
thin films
Temperature
Oxidation
Scanning electron microscopy
oxidation
scanning electron microscopy
thickness ratio
Spectroscopic ellipsometry
Energy dispersive X ray analysis
Polysilicon
ellipsometry

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Low-temperature fabrication of polycrystalline Si thin film using Al-induced crystallization without native Al oxide at amorphous Si/Al interface. / Sugimoto, Youhei; Takata, Naoki; Hirota, Takeshi; Ikeda, Ken Ichi; Yoshida, Fuyuki; Nakashima, Hideharu; Nakashima, Hiroshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 7 A, 08.07.2005, p. 4770-4775.

Research output: Contribution to journalArticle

@article{0f7d419516794b4f881eccf85499dccd,
title = "Low-temperature fabrication of polycrystalline Si thin film using Al-induced crystallization without native Al oxide at amorphous Si/Al interface",
abstract = "Low-temperature fabrication of polycrystalline silicon (poly-Si) thin film has been performed by Al-induced crystallization (AIC), and the structural properties have been investigated. In our experiments, to prevent native oxidation of Al film, an amorphous silicon (a-Si)/Al bilayer was formed on the SiO2/Si substrate by electron beam evaporation without breaking the vacuum. The a-Si/Al/SiO2/Si structure was then heated at a low temperature of 400°C to induce AIC. It was confirmed that layer exchange of the a-Si/Al bilayer is induced even though there is no native oxidation of Al film, which was demonstrated by scanning transmission electron microscopy and energy dispersive X-ray analysis. The mechanism for layer exchange of the a-Si/Al bilayer has been discussed. Furthermore, it was verified by scanning electron microscopy and spectroscopic ellipsometry that the a-Si/Al thickness ratio of roughly 1 : 1 is suitable to achieve a flat surface morphology of poly-Si. In addition, it was found, by X-ray diffraction and orientation imaging microscopy, that the Si(111)-oriented grain becomes dominant with decreasing thickness of the a-Si/Al bilayer.",
author = "Youhei Sugimoto and Naoki Takata and Takeshi Hirota and Ikeda, {Ken Ichi} and Fuyuki Yoshida and Hideharu Nakashima and Hiroshi Nakashima",
year = "2005",
month = "7",
day = "8",
doi = "10.1143/JJAP.44.4770",
language = "English",
volume = "44",
pages = "4770--4775",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "7 A",

}

TY - JOUR

T1 - Low-temperature fabrication of polycrystalline Si thin film using Al-induced crystallization without native Al oxide at amorphous Si/Al interface

AU - Sugimoto, Youhei

AU - Takata, Naoki

AU - Hirota, Takeshi

AU - Ikeda, Ken Ichi

AU - Yoshida, Fuyuki

AU - Nakashima, Hideharu

AU - Nakashima, Hiroshi

PY - 2005/7/8

Y1 - 2005/7/8

N2 - Low-temperature fabrication of polycrystalline silicon (poly-Si) thin film has been performed by Al-induced crystallization (AIC), and the structural properties have been investigated. In our experiments, to prevent native oxidation of Al film, an amorphous silicon (a-Si)/Al bilayer was formed on the SiO2/Si substrate by electron beam evaporation without breaking the vacuum. The a-Si/Al/SiO2/Si structure was then heated at a low temperature of 400°C to induce AIC. It was confirmed that layer exchange of the a-Si/Al bilayer is induced even though there is no native oxidation of Al film, which was demonstrated by scanning transmission electron microscopy and energy dispersive X-ray analysis. The mechanism for layer exchange of the a-Si/Al bilayer has been discussed. Furthermore, it was verified by scanning electron microscopy and spectroscopic ellipsometry that the a-Si/Al thickness ratio of roughly 1 : 1 is suitable to achieve a flat surface morphology of poly-Si. In addition, it was found, by X-ray diffraction and orientation imaging microscopy, that the Si(111)-oriented grain becomes dominant with decreasing thickness of the a-Si/Al bilayer.

AB - Low-temperature fabrication of polycrystalline silicon (poly-Si) thin film has been performed by Al-induced crystallization (AIC), and the structural properties have been investigated. In our experiments, to prevent native oxidation of Al film, an amorphous silicon (a-Si)/Al bilayer was formed on the SiO2/Si substrate by electron beam evaporation without breaking the vacuum. The a-Si/Al/SiO2/Si structure was then heated at a low temperature of 400°C to induce AIC. It was confirmed that layer exchange of the a-Si/Al bilayer is induced even though there is no native oxidation of Al film, which was demonstrated by scanning transmission electron microscopy and energy dispersive X-ray analysis. The mechanism for layer exchange of the a-Si/Al bilayer has been discussed. Furthermore, it was verified by scanning electron microscopy and spectroscopic ellipsometry that the a-Si/Al thickness ratio of roughly 1 : 1 is suitable to achieve a flat surface morphology of poly-Si. In addition, it was found, by X-ray diffraction and orientation imaging microscopy, that the Si(111)-oriented grain becomes dominant with decreasing thickness of the a-Si/Al bilayer.

UR - http://www.scopus.com/inward/record.url?scp=31644450940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31644450940&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.4770

DO - 10.1143/JJAP.44.4770

M3 - Article

AN - SCOPUS:31644450940

VL - 44

SP - 4770

EP - 4775

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 7 A

ER -