Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method

Dong Wang, Yuta Nagatomi, Shuta Kojima, Keisuke Yamamoto, Hiroshi Nakashima

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3 Citations (Scopus)

Abstract

Y2O3/Ge gate stacks with ultrathin GeOx interlayer were fabricated by two-step rf sputtering using a Y2O 3 target followed by a vacuum-annealing, which were carried out in the same chamber without vacuum breaking. TiN-gate Ge metal-insulator- semiconductor (MIS) capacitors were fabricated with equivalent oxide thicknesses in the range of 2.1-2.3 nm. The highest temperature was 400 °C for the entire fabrication process. Interface states density (Dit) was characterized using a deep-level transient spectroscopy method with optimized injection pulse and quiescent reverse-bias voltages at each temperature. D it values were approximately 4 × 1013, 5 × 1011, and 3 × 1012 cm- 2 eV- 1 at energy positions around valence band, mid-gap, and conduction band, respectively. The slow trap contribution was also small in the upper half of the band-gap, implying a potential application of the Y2O3/Ge gate stack to the fabrication of high-performance Ge-n-MIS field effect transistors.

Original languageEnglish
Pages (from-to)288-291
Number of pages4
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - Apr 30 2014

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Deep level transient spectroscopy
Interface states
interlayers
Energy gap
MISFET devices
Vacuum
MIS (semiconductors)
Fabrication
fabrication
Bias voltage
Valence bands
Conduction bands
Oxides
spectroscopy
Sputtering
Capacitors
Metals
Annealing
Semiconductor materials
vacuum chambers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method",
abstract = "Y2O3/Ge gate stacks with ultrathin GeOx interlayer were fabricated by two-step rf sputtering using a Y2O 3 target followed by a vacuum-annealing, which were carried out in the same chamber without vacuum breaking. TiN-gate Ge metal-insulator- semiconductor (MIS) capacitors were fabricated with equivalent oxide thicknesses in the range of 2.1-2.3 nm. The highest temperature was 400 °C for the entire fabrication process. Interface states density (Dit) was characterized using a deep-level transient spectroscopy method with optimized injection pulse and quiescent reverse-bias voltages at each temperature. D it values were approximately 4 × 1013, 5 × 1011, and 3 × 1012 cm- 2 eV- 1 at energy positions around valence band, mid-gap, and conduction band, respectively. The slow trap contribution was also small in the upper half of the band-gap, implying a potential application of the Y2O3/Ge gate stack to the fabrication of high-performance Ge-n-MIS field effect transistors.",
author = "Dong Wang and Yuta Nagatomi and Shuta Kojima and Keisuke Yamamoto and Hiroshi Nakashima",
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AU - Wang, Dong

AU - Nagatomi, Yuta

AU - Kojima, Shuta

AU - Yamamoto, Keisuke

AU - Nakashima, Hiroshi

PY - 2014/4/30

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N2 - Y2O3/Ge gate stacks with ultrathin GeOx interlayer were fabricated by two-step rf sputtering using a Y2O 3 target followed by a vacuum-annealing, which were carried out in the same chamber without vacuum breaking. TiN-gate Ge metal-insulator- semiconductor (MIS) capacitors were fabricated with equivalent oxide thicknesses in the range of 2.1-2.3 nm. The highest temperature was 400 °C for the entire fabrication process. Interface states density (Dit) was characterized using a deep-level transient spectroscopy method with optimized injection pulse and quiescent reverse-bias voltages at each temperature. D it values were approximately 4 × 1013, 5 × 1011, and 3 × 1012 cm- 2 eV- 1 at energy positions around valence band, mid-gap, and conduction band, respectively. The slow trap contribution was also small in the upper half of the band-gap, implying a potential application of the Y2O3/Ge gate stack to the fabrication of high-performance Ge-n-MIS field effect transistors.

AB - Y2O3/Ge gate stacks with ultrathin GeOx interlayer were fabricated by two-step rf sputtering using a Y2O 3 target followed by a vacuum-annealing, which were carried out in the same chamber without vacuum breaking. TiN-gate Ge metal-insulator- semiconductor (MIS) capacitors were fabricated with equivalent oxide thicknesses in the range of 2.1-2.3 nm. The highest temperature was 400 °C for the entire fabrication process. Interface states density (Dit) was characterized using a deep-level transient spectroscopy method with optimized injection pulse and quiescent reverse-bias voltages at each temperature. D it values were approximately 4 × 1013, 5 × 1011, and 3 × 1012 cm- 2 eV- 1 at energy positions around valence band, mid-gap, and conduction band, respectively. The slow trap contribution was also small in the upper half of the band-gap, implying a potential application of the Y2O3/Ge gate stack to the fabrication of high-performance Ge-n-MIS field effect transistors.

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