Low-temperature formation (<500 °c) of poly-Ge thin-film transistor with NiGe Schottky source/drain

Taizoh Sadoh, H. Kamizuru, A. Kenjo, M. Miyao

Research output: Contribution to journalArticle

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Abstract

Poly-Ge thin-film transistors (TFTs) with Schottky source/drain (S/D) contacts were fabricated on glass by low-temperature (<500 °C) processing. First, the annealing characteristics of Ni/crystal-Ge stacked structures were examined. The results indicated that NiGen-Ge Schottky contacts (φ Bn =0.51 eV, n=1) with flat interfaces and low reverse leakage current [(2-5) × 10-2 A cm2] could be obtained by choosing an appropriate annealing temperature (200-300 °C). Based on this result, p -channel TFTs were fabricated with poly-Ge formed on glass by solid-phase crystallization at 500 °C. TFTs showed relatively high hole mobility (about 140 cm2 V s) with very low S/D parasitic resistance and no kink effect. The potential capability of the proposed devices for high-performance TFTs was demonstrated.

Original languageEnglish
Article number192114
JournalApplied Physics Letters
Volume89
Issue number19
DOIs
Publication statusPublished - Nov 16 2006

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transistors
thin films
annealing
glass
hole mobility
solid phases
electric contacts
leakage
crystallization
crystals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Low-temperature formation (<500 °c) of poly-Ge thin-film transistor with NiGe Schottky source/drain. / Sadoh, Taizoh; Kamizuru, H.; Kenjo, A.; Miyao, M.

In: Applied Physics Letters, Vol. 89, No. 19, 192114, 16.11.2006.

Research output: Contribution to journalArticle

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