Low temperature formation of multi-layered structures of ferromagnetic silicide Fe 3 Si and Ge

Koji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh, Yoshihito Maeda, Masanobu Miyao

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14 Citations (Scopus)


Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.

Original languageEnglish
Pages (from-to)6215-6217
Number of pages3
JournalApplied Surface Science
Issue number19
Publication statusPublished - Jul 30 2008

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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