Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films