Low temperature formation of multi-layered structures of ferromagnetic silicide Fe                         3                         Si and Ge

Koji Ueda; Yuichiro Ando; Mamoru Kumano; Taizoh Sadoh; Yoshihito Maeda; Masanobu Miyao

doi:10.1016/j.apsusc.2008.02.139

Low temperature formation of multi-layered structures of ferromagnetic silicide Fe ₃ Si and Ge

Koji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh, Yoshihito Maeda, Masanobu Miyao

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Research output: Contribution to journal › Article › peer-review

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Abstract

Low-temperature (<300 °C) molecular beam epitaxy of Fe ₃ Si/Ge was investigated. By optimizing growth conditions, Fe ₃ Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe ₃ Si/Ge on high quality Fe ₃ Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe ₃ Si and Ge layers were epitaxially grown on Fe ₃ Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe ₃ Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe ₃ Si/Ge] ₂ multi-layered structures.

Original language	English
Pages (from-to)	6215-6217
Number of pages	3
Journal	Applied Surface Science
Volume	254
Issue number	19
DOIs	https://doi.org/10.1016/j.apsusc.2008.02.139
Publication status	Published - Jul 30 2008

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2008.02.139

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Low temperature formation of multi-layered structures of ferromagnetic silicide Fe ₃ Si and Ge . / Ueda, Koji; Ando, Yuichiro; Kumano, Mamoru et al.

In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6215-6217.

Research output: Contribution to journal › Article › peer-review

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abstract = " Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.",

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AU - Ueda, Koji

AU - Ando, Yuichiro

AU - Kumano, Mamoru

AU - Sadoh, Taizoh

AU - Maeda, Yoshihito

AU - Miyao, Masanobu

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N2 - Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.

AB - Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.

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Low temperature formation of multi-layered structures of ferromagnetic silicide Fe ₃ Si and Ge

Abstract

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