Low temperature formation of multi-layered structures of ferromagnetic silicide Fe 3 Si and Ge

Koji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh, Yoshihito Maeda, Masanobu Miyao

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.

Original languageEnglish
Pages (from-to)6215-6217
Number of pages3
JournalApplied Surface Science
Volume254
Issue number19
DOIs
Publication statusPublished - Jul 30 2008

Fingerprint

Substrates
High energy electron diffraction
Stacking faults
Epitaxial growth
Molecular beam epitaxy
Temperature
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Low temperature formation of multi-layered structures of ferromagnetic silicide Fe 3 Si and Ge . / Ueda, Koji; Ando, Yuichiro; Kumano, Mamoru; Sadoh, Taizoh; Maeda, Yoshihito; Miyao, Masanobu.

In: Applied Surface Science, Vol. 254, No. 19, 30.07.2008, p. 6215-6217.

Research output: Contribution to journalArticle

Ueda, Koji ; Ando, Yuichiro ; Kumano, Mamoru ; Sadoh, Taizoh ; Maeda, Yoshihito ; Miyao, Masanobu. / Low temperature formation of multi-layered structures of ferromagnetic silicide Fe 3 Si and Ge In: Applied Surface Science. 2008 ; Vol. 254, No. 19. pp. 6215-6217.
@article{3bc2809105a74659808fcf390452bbf4,
title = "Low temperature formation of multi-layered structures of ferromagnetic silicide Fe 3 Si and Ge",
abstract = "Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.",
author = "Koji Ueda and Yuichiro Ando and Mamoru Kumano and Taizoh Sadoh and Yoshihito Maeda and Masanobu Miyao",
year = "2008",
month = "7",
day = "30",
doi = "10.1016/j.apsusc.2008.02.139",
language = "English",
volume = "254",
pages = "6215--6217",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "19",

}

TY - JOUR

T1 - Low temperature formation of multi-layered structures of ferromagnetic silicide Fe 3 Si and Ge

AU - Ueda, Koji

AU - Ando, Yuichiro

AU - Kumano, Mamoru

AU - Sadoh, Taizoh

AU - Maeda, Yoshihito

AU - Miyao, Masanobu

PY - 2008/7/30

Y1 - 2008/7/30

N2 - Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.

AB - Low-temperature (<300 °C) molecular beam epitaxy of Fe 3 Si/Ge was investigated. By optimizing growth conditions, Fe 3 Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe 3 Si/Ge on high quality Fe 3 Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe 3 Si and Ge layers were epitaxially grown on Fe 3 Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe 3 Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe 3 Si/Ge] 2 multi-layered structures.

UR - http://www.scopus.com/inward/record.url?scp=45049085654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45049085654&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2008.02.139

DO - 10.1016/j.apsusc.2008.02.139

M3 - Article

AN - SCOPUS:45049085654

VL - 254

SP - 6215

EP - 6217

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 19

ER -