Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization

Hongmiao Gao; Rikuta Aoki; Masaya Sasaki; Masanobu Miyao; Taizoh Sadoh

Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization

Hongmiao Gao, Rikuta Aoki, Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low-Temperature (<500°C) formation of n-Type crystalline Ge on insulator is desired to merge optical devices onto large-scale integrated circuits. To achieve this, layer-exchange crystallization using a-Ge/Sb stacked structures is investigated. It is revealed that annealing of the stacked structures at 450°C enables formation of high-quality n-Type crystalline Ge on insulator through a layer-exchange process. The grown film shows large domain structures (0.6 mm). This technique will facilitate realization of the next-generation large-scale integrated circuits combined with optical functions.

Original language	English
Title of host publication	AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	239-240
Number of pages	2
ISBN (Electronic)	9784990875336
Publication status	Published - Aug 8 2017
Event	24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan Duration: Jul 4 2017 → Jul 7 2017

Other

Other	24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
Country/Territory	Japan
City	Kyoto
Period	7/4/17 → 7/7/17

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computational Theory and Mathematics

Cite this

Gao, H., Aoki, R., Sasaki, M., Miyao, M., & Sadoh, T. (2017). Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings (pp. 239-240). [8006136] Institute of Electrical and Electronics Engineers Inc..

Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization. / Gao, Hongmiao; Aoki, Rikuta; Sasaki, Masaya; Miyao, Masanobu; Sadoh, Taizoh.

AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 239-240 8006136.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gao, H, Aoki, R, Sasaki, M, Miyao, M & Sadoh, T 2017, Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization. in AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8006136, Institute of Electrical and Electronics Engineers Inc., pp. 239-240, 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017, Kyoto, Japan, 7/4/17.

Gao, Hongmiao ; Aoki, Rikuta ; Sasaki, Masaya ; Miyao, Masanobu ; Sadoh, Taizoh. / Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization. AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 239-240

@inproceedings{41273081d6264f57bd933f67a12c5435,

title = "Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization",

abstract = "Low-Temperature (<500°C) formation of n-Type crystalline Ge on insulator is desired to merge optical devices onto large-scale integrated circuits. To achieve this, layer-exchange crystallization using a-Ge/Sb stacked structures is investigated. It is revealed that annealing of the stacked structures at 450°C enables formation of high-quality n-Type crystalline Ge on insulator through a layer-exchange process. The grown film shows large domain structures (0.6 mm). This technique will facilitate realization of the next-generation large-scale integrated circuits combined with optical functions.",

author = "Hongmiao Gao and Rikuta Aoki and Masaya Sasaki and Masanobu Miyao and Taizoh Sadoh",

year = "2017",

month = aug,

day = "8",

language = "English",

pages = "239--240",

booktitle = "AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 ; Conference date: 04-07-2017 Through 07-07-2017",

}

TY - GEN

T1 - Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization

AU - Gao, Hongmiao

AU - Aoki, Rikuta

AU - Sasaki, Masaya

AU - Miyao, Masanobu

AU - Sadoh, Taizoh

PY - 2017/8/8

Y1 - 2017/8/8

N2 - Low-Temperature (<500°C) formation of n-Type crystalline Ge on insulator is desired to merge optical devices onto large-scale integrated circuits. To achieve this, layer-exchange crystallization using a-Ge/Sb stacked structures is investigated. It is revealed that annealing of the stacked structures at 450°C enables formation of high-quality n-Type crystalline Ge on insulator through a layer-exchange process. The grown film shows large domain structures (0.6 mm). This technique will facilitate realization of the next-generation large-scale integrated circuits combined with optical functions.

AB - Low-Temperature (<500°C) formation of n-Type crystalline Ge on insulator is desired to merge optical devices onto large-scale integrated circuits. To achieve this, layer-exchange crystallization using a-Ge/Sb stacked structures is investigated. It is revealed that annealing of the stacked structures at 450°C enables formation of high-quality n-Type crystalline Ge on insulator through a layer-exchange process. The grown film shows large domain structures (0.6 mm). This technique will facilitate realization of the next-generation large-scale integrated circuits combined with optical functions.

UR - http://www.scopus.com/inward/record.url?scp=85034433064&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85034433064&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85034433064

SP - 239

EP - 240

BT - AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017

Y2 - 4 July 2017 through 7 July 2017

ER -

Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization

Abstract

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this