Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization

Hongmiao Gao, Rikuta Aoki, Masaya Sasaki, Masanobu Miyao, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-Temperature (<500°C) formation of n-Type crystalline Ge on insulator is desired to merge optical devices onto large-scale integrated circuits. To achieve this, layer-exchange crystallization using a-Ge/Sb stacked structures is investigated. It is revealed that annealing of the stacked structures at 450°C enables formation of high-quality n-Type crystalline Ge on insulator through a layer-exchange process. The grown film shows large domain structures (0.6 mm). This technique will facilitate realization of the next-generation large-scale integrated circuits combined with optical functions.

Original languageEnglish
Title of host publicationAM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages239-240
Number of pages2
ISBN (Electronic)9784990875336
Publication statusPublished - Aug 8 2017
Event24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan
Duration: Jul 4 2017Jul 7 2017

Other

Other24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017
CountryJapan
CityKyoto
Period7/4/177/7/17

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computational Theory and Mathematics

Cite this

Gao, H., Aoki, R., Sasaki, M., Miyao, M., & Sadoh, T. (2017). Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings (pp. 239-240). [8006136] Institute of Electrical and Electronics Engineers Inc..