Abstract
Low-Temperature (<500°C) formation of n-Type crystalline Ge on insulator is desired to merge optical devices onto large-scale integrated circuits. To achieve this, layer-exchange crystallization using a-Ge/Sb stacked structures is investigated. It is revealed that annealing of the stacked structures at 450°C enables formation of high-quality n-Type crystalline Ge on insulator through a layer-exchange process. The grown film shows large domain structures (0.6 mm). This technique will facilitate realization of the next-generation large-scale integrated circuits combined with optical functions.
| Original language | English |
|---|---|
| Title of host publication | AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices |
| Subtitle of host publication | TFT Technologies and FPD Materials, Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 239-240 |
| Number of pages | 2 |
| ISBN (Electronic) | 9784990875336 |
| Publication status | Published - Aug 8 2017 |
| Event | 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan Duration: Jul 4 2017 → Jul 7 2017 |
Other
| Other | 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 7/4/17 → 7/7/17 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Computational Theory and Mathematics
Cite this
Gao, H., Aoki, R., Sasaki, M., Miyao, M., & Sadoh, T. (2017). Low-Temperature formation of n-Type Ge/Insulator by Sb-Induced layer exchange crystallization. In AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings (pp. 239-240). [8006136] Institute of Electrical and Electronics Engineers Inc..