Abstract
Low-Temperature (<500°C) formation of n-Type crystalline Ge on insulator is desired to merge optical devices onto large-scale integrated circuits. To achieve this, layer-exchange crystallization using a-Ge/Sb stacked structures is investigated. It is revealed that annealing of the stacked structures at 450°C enables formation of high-quality n-Type crystalline Ge on insulator through a layer-exchange process. The grown film shows large domain structures (0.6 mm). This technique will facilitate realization of the next-generation large-scale integrated circuits combined with optical functions.
Original language | English |
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Title of host publication | AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices |
Subtitle of host publication | TFT Technologies and FPD Materials, Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 239-240 |
Number of pages | 2 |
ISBN (Electronic) | 9784990875336 |
Publication status | Published - Aug 8 2017 |
Event | 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 - Kyoto, Japan Duration: Jul 4 2017 → Jul 7 2017 |
Other
Other | 24th International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2017 |
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Country | Japan |
City | Kyoto |
Period | 7/4/17 → 7/7/17 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Computational Theory and Mathematics