Low-temperature formation of poly-Si1-xGex (x

0-1) on SiO2 by Au-mediated lateral crystallization

Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The Au-mediated low-temperature (400°C) crystallization of amorphous-Si1-xGex (x: 0-1) on SiO2 has been investigated. A growth velocity exceeding 20μm/h was obtained for samples in the entire range of Ge fractions (x: 0-1), although it decreased with increasing Ge fraction. These values are much higher than those obtained by conventional Ni-mediated crystallization. As a result, strain-free poly-S 1-xGex (x: 0-1) with large areas (>20μm) were obtained at a low temperature (400°C). This newly developed method has a high potential for fabricating poly-Si1-xGex (x: 0-1) on a glass substrate.

Original languageEnglish
Pages (from-to)2405-2408
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume44
Issue number4 B
DOIs
Publication statusPublished - Apr 2005

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Crystallization
crystallization
Glass
Temperature
glass
Substrates

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Low-temperature formation of poly-Si1-xGex (x : 0-1) on SiO2 by Au-mediated lateral crystallization. / Kanno, Hiroshi; Aoki, Tomohisa; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, Vol. 44, No. 4 B, 04.2005, p. 2405-2408.

Research output: Contribution to journalArticle

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