Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.
|Number of pages||6|
|Journal||IEEJ Transactions on Electronics, Information and Systems|
|Publication status||Published - Jan 1 2006|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering