Low-Temperature Formation of Poly-Si1-xGex (0<x<1) Films by Ni-Induced Lateral Crystallization for Advanced TFT

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review


Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.

Original languageEnglish
Pages (from-to)1073-1078
Number of pages6
JournalIEEJ Transactions on Electronics, Information and Systems
Issue number9
Publication statusPublished - Jan 1 2006

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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