Low-Temperature Formation of Poly-Si1-xGex (0<x<1) Films by Ni-Induced Lateral Crystallization for Advanced TFT

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.

Original languageEnglish
Pages (from-to)1073-1078
Number of pages6
JournalIEEJ Transactions on Electronics, Information and Systems
Volume126
Issue number9
DOIs
Publication statusPublished - Jan 1 2006

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Crystallization
Carrier mobility
Display devices
Electric fields
Semiconductor materials
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Low-Temperature Formation of Poly-Si1-xGex (0<x<1) Films by Ni-Induced Lateral Crystallization for Advanced TFT. / Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: IEEJ Transactions on Electronics, Information and Systems, Vol. 126, No. 9, 01.01.2006, p. 1073-1078.

Research output: Contribution to journalArticle

@article{abfcaff058764d118fb7dceca343a6a3,
title = "Low-Temperature Formation of Poly-Si1-xGex (0<x<1) Films by Ni-Induced Lateral Crystallization for Advanced TFT",
abstract = "Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.",
author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",
year = "2006",
month = "1",
day = "1",
doi = "10.1541/ieejeiss.126.1073",
language = "English",
volume = "126",
pages = "1073--1078",
journal = "IEEJ Transactions on Electronics, Information and Systems",
issn = "0385-4221",
publisher = "The Institute of Electrical Engineers of Japan",
number = "9",

}

TY - JOUR

T1 - Low-Temperature Formation of Poly-Si1-xGex (0<x<1) Films by Ni-Induced Lateral Crystallization for Advanced TFT

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2006/1/1

Y1 - 2006/1/1

N2 - Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.

AB - Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0 ≦x≦1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≦x≦1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.

UR - http://www.scopus.com/inward/record.url?scp=33748533782&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748533782&partnerID=8YFLogxK

U2 - 10.1541/ieejeiss.126.1073

DO - 10.1541/ieejeiss.126.1073

M3 - Article

VL - 126

SP - 1073

EP - 1078

JO - IEEJ Transactions on Electronics, Information and Systems

JF - IEEJ Transactions on Electronics, Information and Systems

SN - 0385-4221

IS - 9

ER -