The Au-mediated low-temperature (400°C) crystallization of amorphous-Si1-xGex (x: 0-1) on SiO2 has been investigated. A growth velocity exceeding 20μm/h was obtained for samples in the entire range of Ge fractions (x: 0-1), although it decreased with increasing Ge fraction. These values are much higher than those obtained by conventional Ni-mediated crystallization. As a result, strain-free poly-S 1-xGex (x: 0-1) with large areas (>20μm) were obtained at a low temperature (400°C). This newly developed method has a high potential for fabricating poly-Si1-xGex (x: 0-1) on a glass substrate.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - Apr 1 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)