TY - JOUR
T1 - Low-temperature formation of poly-Si1-xGex (x
T2 - 0-1) on SiO2 by Au-mediated lateral crystallization
AU - Kanno, Hiroshi
AU - Aoki, Tomohisa
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2005/4/1
Y1 - 2005/4/1
N2 - The Au-mediated low-temperature (400°C) crystallization of amorphous-Si1-xGex (x: 0-1) on SiO2 has been investigated. A growth velocity exceeding 20μm/h was obtained for samples in the entire range of Ge fractions (x: 0-1), although it decreased with increasing Ge fraction. These values are much higher than those obtained by conventional Ni-mediated crystallization. As a result, strain-free poly-S 1-xGex (x: 0-1) with large areas (>20μm) were obtained at a low temperature (400°C). This newly developed method has a high potential for fabricating poly-Si1-xGex (x: 0-1) on a glass substrate.
AB - The Au-mediated low-temperature (400°C) crystallization of amorphous-Si1-xGex (x: 0-1) on SiO2 has been investigated. A growth velocity exceeding 20μm/h was obtained for samples in the entire range of Ge fractions (x: 0-1), although it decreased with increasing Ge fraction. These values are much higher than those obtained by conventional Ni-mediated crystallization. As a result, strain-free poly-S 1-xGex (x: 0-1) with large areas (>20μm) were obtained at a low temperature (400°C). This newly developed method has a high potential for fabricating poly-Si1-xGex (x: 0-1) on a glass substrate.
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U2 - 10.1143/JJAP.44.2405
DO - 10.1143/JJAP.44.2405
M3 - Article
AN - SCOPUS:21244502538
SN - 0021-4922
VL - 44
SP - 2405
EP - 2408
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 B
ER -