Low-temperature formation of poly-Si1-xGex (x: 0-1) on SiO2 by Au-mediated lateral crystallization

Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

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12 Citations (Scopus)


The Au-mediated low-temperature (400°C) crystallization of amorphous-Si1-xGex (x: 0-1) on SiO2 has been investigated. A growth velocity exceeding 20μm/h was obtained for samples in the entire range of Ge fractions (x: 0-1), although it decreased with increasing Ge fraction. These values are much higher than those obtained by conventional Ni-mediated crystallization. As a result, strain-free poly-S 1-xGex (x: 0-1) with large areas (>20μm) were obtained at a low temperature (400°C). This newly developed method has a high potential for fabricating poly-Si1-xGex (x: 0-1) on a glass substrate.

Original languageEnglish
Pages (from-to)2405-2408
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - Apr 1 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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