Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization

T. Sakai, R. Matsumura, T. Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature formation of Sn-doped Ge on insulator is desired to realize next generation flexible electronics. To achieve this, metal-induced crystallization (MIC) of a-GeSn layers on insulating substrates is investigated using Au as a catalyst metal. For a-GeSn with initial Sn concentration of 5%, Sn-doped Ge is laterally grown around Au patterns at low temperatures (≤250°C). The Sn concentration (0.5-2.0%) in the grown layers can be controlled by the annealing temperature in the range of 150-250°C.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
EditorsY. Kuo
PublisherElectrochemical Society Inc.
Pages105-108
Number of pages4
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Publication series

NameECS Transactions
Number10
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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