Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization

T. Sakai, R. Matsumura, Taizoh Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature formation of Sn-doped Ge on insulator is desired to realize next generation flexible electronics. To achieve this, metal-induced crystallization (MIC) of a-GeSn layers on insulating substrates is investigated using Au as a catalyst metal. For a-GeSn with initial Sn concentration of 5%, Sn-doped Ge is laterally grown around Au patterns at low temperatures (≤250°C). The Sn concentration (0.5-2.0%) in the grown layers can be controlled by the annealing temperature in the range of 150-250°C.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
PublisherElectrochemical Society Inc.
Pages105-108
Number of pages4
Volume75
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

Fingerprint

Crystallization
Substrates
Metals
Flexible electronics
Temperature
Annealing
Catalysts

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Sakai, T., Matsumura, R., Sadoh, T., & Miyao, M. (2016). Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization. In Thin Film Transistors 13, TFT 13 (10 ed., Vol. 75, pp. 105-108). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0105ecst

Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization. / Sakai, T.; Matsumura, R.; Sadoh, Taizoh; Miyao, M.

Thin Film Transistors 13, TFT 13. Vol. 75 10. ed. Electrochemical Society Inc., 2016. p. 105-108.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sakai, T, Matsumura, R, Sadoh, T & Miyao, M 2016, Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization. in Thin Film Transistors 13, TFT 13. 10 edn, vol. 75, Electrochemical Society Inc., pp. 105-108, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07510.0105ecst
Sakai T, Matsumura R, Sadoh T, Miyao M. Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization. In Thin Film Transistors 13, TFT 13. 10 ed. Vol. 75. Electrochemical Society Inc. 2016. p. 105-108 https://doi.org/10.1149/07510.0105ecst
Sakai, T. ; Matsumura, R. ; Sadoh, Taizoh ; Miyao, M. / Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization. Thin Film Transistors 13, TFT 13. Vol. 75 10. ed. Electrochemical Society Inc., 2016. pp. 105-108
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