Low-temperature formation of Sn-doped Ge on insulating substrates by metal-induced crystallization

T. Sakai, R. Matsumura, T. Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low-temperature formation of Sn-doped Ge on insulator is desired to realize next generation flexible electronics. To achieve this, metal-induced crystallization (MIC) of a-GeSn layers on insulating substrates is investigated using Au as a catalyst metal. For a-GeSn with initial Sn concentration of 5%, Sn-doped Ge is laterally grown around Au patterns at low temperatures (≤250°C). The Sn concentration (0.5-2.0%) in the grown layers can be controlled by the annealing temperature in the range of 150-250°C.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
EditorsY. Kuo
PublisherElectrochemical Society Inc.
Pages105-108
Number of pages4
Edition10
ISBN (Electronic)9781607687276, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs
Publication statusPublished - 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Publication series

NameECS Transactions
Number10
Volume75
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
Country/TerritoryUnited States
CityHonolulu
Period10/2/1610/7/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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