Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target

T. Yoshitake; T. Hanada; K. Nagayama

doi:10.1023/A:1006722205010

Low temperature growth of β-FeSi₂ films on Si(111) by RF magnetron sputtering using a FeSi₂ alloy target

T. Yoshitake, T. Hanada, K. Nagayama

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this study, β-FeSi₂ phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.

Original language	English
Pages (from-to)	537-538
Number of pages	2
Journal	Journal of Materials Science Letters
Volume	19
Issue number	7
DOIs	https://doi.org/10.1023/A:1006722205010
Publication status	Published - 2000

All Science Journal Classification (ASJC) codes

Materials Science(all)

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title = "Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target",

abstract = "In this study, β-FeSi2 phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.",

author = "T. Yoshitake and T. Hanada and K. Nagayama",

year = "2000",

doi = "10.1023/A:1006722205010",

language = "English",

volume = "19",

pages = "537--538",

journal = "Journal of Materials Science Letters",

issn = "0261-8028",

publisher = "Chapman & Hall",

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TY - JOUR

T1 - Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target

AU - Yoshitake, T.

AU - Hanada, T.

AU - Nagayama, K.

PY - 2000

Y1 - 2000

N2 - In this study, β-FeSi2 phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.

AB - In this study, β-FeSi2 phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.

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U2 - 10.1023/A:1006722205010

DO - 10.1023/A:1006722205010

M3 - Article

AN - SCOPUS:0033871377

SN - 0261-8028

VL - 19

SP - 537

EP - 538

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 7

ER -

Low temperature growth of β-FeSi₂ films on Si(111) by RF magnetron sputtering using a FeSi₂ alloy target

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