Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target

Tsuyoshi Yoshitake, T. Hanada, K. Nagayama

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    In this study, β-FeSi2 phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.

    Original languageEnglish
    Pages (from-to)537-538
    Number of pages2
    JournalJournal of Materials Science Letters
    Volume19
    Issue number7
    DOIs
    Publication statusPublished - Jan 1 2000

    Fingerprint

    Growth temperature
    Magnetron sputtering
    Annealing
    Defects
    Temperature

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)

    Cite this

    Low temperature growth of β-FeSi2 films on Si(111) by RF magnetron sputtering using a FeSi2 alloy target. / Yoshitake, Tsuyoshi; Hanada, T.; Nagayama, K.

    In: Journal of Materials Science Letters, Vol. 19, No. 7, 01.01.2000, p. 537-538.

    Research output: Contribution to journalArticle

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    abstract = "In this study, β-FeSi2 phase was successfully grown at low temperature using an RF magnetron sputtering method. Although the film contained many defects, the possibility of improving them through annealing was shown.",
    author = "Tsuyoshi Yoshitake and T. Hanada and K. Nagayama",
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