TY - JOUR
T1 - Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser deposition
AU - Yoshitake, T.
AU - Nagamoto, T.
AU - Nagayama, K.
N1 - Funding Information:
The authors would like to acknowledge Dr Y. Maeda, Osaka Prefectural University, and Professor K. Miyake, Saitama University, for valuable discussion and encouragement. We would like to thank Professor K. Morinaga, Kyushu University, for presenting the main parts of the vacuum equipment. We are very grateful to Mr Tsuya, Sumitomo Metals, for presenting Si substrates. We are very grateful to Dr M.D. Bowden, Dr Y. Kajiwara, Professor K. Uchino and Professor K. Muraoka for assisting with the experiment in the Institute for Ionized Gas and Laser Research, Kyushu University. The Raman spectrum measurement and the XRD measurement were made using equipment at the Center of Advanced Instrumental Analysis, Kyushu University. We are very grateful to Mr. K. Sakamoto for being very helpful with the Raman spectrum measurement. We are very grateful to Dr M. Itakura, Professor N. Kuwano and Professor K. Oki, Kyushu University, for support of the preparation of samples for the TEM observation. We are very grateful to Tech. E. Tanaka and Tech. T. Manabe for being very helpful with the observation using the TEM at the Research Laboratory for High Voltage Electron Microscope, Kyushu University. This work is supported by the Fukuoka Industry, Science and Technology Foundation, and the Foundation of the Interdisciplinary Graduate School of Engineering Science, Kyushu University.
PY - 2000/3/15
Y1 - 2000/3/15
N2 - Iron disilicide thin films were prepared by pulsed laser deposition on Si(100) substrates using an FeSi2 alloy target. Polycrystal films of β-FeSi2 phase could be formed even at a substrate temperature of 20°C. In addition to the β-FeSi2 phase, the FeSi phase was observed for substrate temperatures between 400 and 600°C. This is attributed to the mobility enhancement of Si atoms. At a temperature higher than 700°C, the FeSi phase disappeared and β-FeSi2 single phase films having columnar structure were grown due to the mobility enhancement of both the Fe and Si atoms. For all films deposited at various substrate temperatures, the stoichmetry was constant in the depth direction. Thus, it is thought that Si atoms from the substrate hardly diffused into the film.
AB - Iron disilicide thin films were prepared by pulsed laser deposition on Si(100) substrates using an FeSi2 alloy target. Polycrystal films of β-FeSi2 phase could be formed even at a substrate temperature of 20°C. In addition to the β-FeSi2 phase, the FeSi phase was observed for substrate temperatures between 400 and 600°C. This is attributed to the mobility enhancement of Si atoms. At a temperature higher than 700°C, the FeSi phase disappeared and β-FeSi2 single phase films having columnar structure were grown due to the mobility enhancement of both the Fe and Si atoms. For all films deposited at various substrate temperatures, the stoichmetry was constant in the depth direction. Thus, it is thought that Si atoms from the substrate hardly diffused into the film.
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U2 - 10.1016/S0921-5107(99)00484-5
DO - 10.1016/S0921-5107(99)00484-5
M3 - Conference article
AN - SCOPUS:0033907398
VL - 72
SP - 124
EP - 127
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 2
T2 - The International Conference on Advanced Materials 1999, Symposium M: Silicon-based Materials and Devices
Y2 - 13 June 1999 through 18 June 1999
ER -