Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser deposition

T. Yoshitake; T. Nagamoto; K. Nagayama

doi:10.1016/S0921-5107(99)00484-5

Low temperature growth of β-FeSi₂ thin films on Si(100) by pulsed laser deposition

T. Yoshitake, T. Nagamoto, K. Nagayama

Research output: Contribution to journal › Conference article › peer-review

24 Citations (Scopus)

Abstract

Iron disilicide thin films were prepared by pulsed laser deposition on Si(100) substrates using an FeSi₂ alloy target. Polycrystal films of β-FeSi₂ phase could be formed even at a substrate temperature of 20°C. In addition to the β-FeSi₂ phase, the FeSi phase was observed for substrate temperatures between 400 and 600°C. This is attributed to the mobility enhancement of Si atoms. At a temperature higher than 700°C, the FeSi phase disappeared and β-FeSi₂ single phase films having columnar structure were grown due to the mobility enhancement of both the Fe and Si atoms. For all films deposited at various substrate temperatures, the stoichmetry was constant in the depth direction. Thus, it is thought that Si atoms from the substrate hardly diffused into the film.

Original language	English
Pages (from-to)	124-127
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	72
Issue number	2
DOIs	https://doi.org/10.1016/S0921-5107(99)00484-5
Publication status	Published - Mar 15 2000
Externally published	Yes
Event	The International Conference on Advanced Materials 1999, Symposium M: Silicon-based Materials and Devices - Beijing, China Duration: Jun 13 1999 → Jun 18 1999

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser deposition",

abstract = "Iron disilicide thin films were prepared by pulsed laser deposition on Si(100) substrates using an FeSi2 alloy target. Polycrystal films of β-FeSi2 phase could be formed even at a substrate temperature of 20°C. In addition to the β-FeSi2 phase, the FeSi phase was observed for substrate temperatures between 400 and 600°C. This is attributed to the mobility enhancement of Si atoms. At a temperature higher than 700°C, the FeSi phase disappeared and β-FeSi2 single phase films having columnar structure were grown due to the mobility enhancement of both the Fe and Si atoms. For all films deposited at various substrate temperatures, the stoichmetry was constant in the depth direction. Thus, it is thought that Si atoms from the substrate hardly diffused into the film.",

author = "T. Yoshitake and T. Nagamoto and K. Nagayama",

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journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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note = "The International Conference on Advanced Materials 1999, Symposium M: Silicon-based Materials and Devices ; Conference date: 13-06-1999 Through 18-06-1999",

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TY - JOUR

T1 - Low temperature growth of β-FeSi2 thin films on Si(100) by pulsed laser deposition

AU - Yoshitake, T.

AU - Nagamoto, T.

AU - Nagayama, K.

PY - 2000/3/15

Y1 - 2000/3/15

N2 - Iron disilicide thin films were prepared by pulsed laser deposition on Si(100) substrates using an FeSi2 alloy target. Polycrystal films of β-FeSi2 phase could be formed even at a substrate temperature of 20°C. In addition to the β-FeSi2 phase, the FeSi phase was observed for substrate temperatures between 400 and 600°C. This is attributed to the mobility enhancement of Si atoms. At a temperature higher than 700°C, the FeSi phase disappeared and β-FeSi2 single phase films having columnar structure were grown due to the mobility enhancement of both the Fe and Si atoms. For all films deposited at various substrate temperatures, the stoichmetry was constant in the depth direction. Thus, it is thought that Si atoms from the substrate hardly diffused into the film.

AB - Iron disilicide thin films were prepared by pulsed laser deposition on Si(100) substrates using an FeSi2 alloy target. Polycrystal films of β-FeSi2 phase could be formed even at a substrate temperature of 20°C. In addition to the β-FeSi2 phase, the FeSi phase was observed for substrate temperatures between 400 and 600°C. This is attributed to the mobility enhancement of Si atoms. At a temperature higher than 700°C, the FeSi phase disappeared and β-FeSi2 single phase films having columnar structure were grown due to the mobility enhancement of both the Fe and Si atoms. For all films deposited at various substrate temperatures, the stoichmetry was constant in the depth direction. Thus, it is thought that Si atoms from the substrate hardly diffused into the film.

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