Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method

Atsushi Horiguchi, Yukio Watanabe

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

Original languageEnglish
Pages (from-to)5314-5316
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Volume38
Issue number9 B
Publication statusPublished - 1999
Externally publishedYes

Fingerprint

Growth temperature
Molecular beam epitaxy
Sputtering
Atomic force microscopy
molecular beam epitaxy
sputtering
atomic force microscopy
Annealing
Thin films
annealing
Substrates
thin films
Temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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