A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 B|
|Publication status||Published - Dec 1 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)