Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method

Atsushi Horiguchi, Yukio Watanabe

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

Original languageEnglish
Pages (from-to)5314-5316
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number9 B
Publication statusPublished - Dec 1 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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