Low temperature growth of europium doped Ga2O3 luminescent films

Zhengwei Chen, Katsuhiko Saito, Tooru Tanaka, Mitsuhiro Nishio, Makoto Arita, Qixin Guo

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Europium (Eu) doped Ga2O3 films were deposited on sapphire substrates by pulsed laser deposition (PLD) with varying Eu contents at substrate temperature as low as 500 °C. Energy dispersive spectroscopy results show that films with different Eu contents can be obtained by changing the Eu composition in the targets. X-ray diffraction and Raman spectra analysis indicate that all films have the monoclinic structure with a preferable (-201) orientation. The films exhibited high transmittance more than 90% in the visible region and 80% in the UV region. Intense red emissions at 613 nm due to the transitions from 5D0 to 7F2 levels in Eu were clearly observed for the Eu doped Ga2O3 films, suggesting PLD is a promising method for obtaining high quality Eu doped Ga2O3 films at low growth temperature.

Original languageEnglish
Pages (from-to)28-33
Number of pages6
JournalJournal of Crystal Growth
Volume430
DOIs
Publication statusPublished - Nov 15 2015

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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