Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

Taizoh Sadoh, R. Aoki, T. Tanaka, J. H. Park, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A technique for low-temperature (≤300°C) formation of largegrain (≥10 μm) Ge-rich SiGe crystals on insulator, whose orientation and position are controlled, should be developed to realize flexible electronics. To achieve this, the gold-induced layerexchange crystallization technique using a-SiGe/Au stacked structures has been investigated. By introduction of diffusion control layers into the a-SiGe/Au interface, (111)-oriented largegrain Ge-rich SiGe crystals are achieved on insulating substrates at low temperatures (≤300°C). Moreover, position control of largegrain crystals becomes possible by patterning the diffusion control layers. This low-temperature growth technique is expected to be useful to realize flexible electronics.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
EditorsY. Kuo
PublisherElectrochemical Society Inc.
Pages95-103
Number of pages9
Volume75
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

Fingerprint

Flexible electronics
Growth temperature
Crystals
Position control
Crystal orientation
Gold
Crystallization
Temperature
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Sadoh, T., Aoki, R., Tanaka, T., Park, J. H., & Miyao, M. (2016). Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. In Y. Kuo (Ed.), Thin Film Transistors 13, TFT 13 (10 ed., Vol. 75, pp. 95-103). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0095ecst

Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. / Sadoh, Taizoh; Aoki, R.; Tanaka, T.; Park, J. H.; Miyao, M.

Thin Film Transistors 13, TFT 13. ed. / Y. Kuo. Vol. 75 10. ed. Electrochemical Society Inc., 2016. p. 95-103.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sadoh, T, Aoki, R, Tanaka, T, Park, JH & Miyao, M 2016, Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. in Y Kuo (ed.), Thin Film Transistors 13, TFT 13. 10 edn, vol. 75, Electrochemical Society Inc., pp. 95-103, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07510.0095ecst
Sadoh T, Aoki R, Tanaka T, Park JH, Miyao M. Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. In Kuo Y, editor, Thin Film Transistors 13, TFT 13. 10 ed. Vol. 75. Electrochemical Society Inc. 2016. p. 95-103 https://doi.org/10.1149/07510.0095ecst
Sadoh, Taizoh ; Aoki, R. ; Tanaka, T. ; Park, J. H. ; Miyao, M. / Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. Thin Film Transistors 13, TFT 13. editor / Y. Kuo. Vol. 75 10. ed. Electrochemical Society Inc., 2016. pp. 95-103
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