Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

Taizoh Sadoh, R. Aoki, T. Tanaka, J. H. Park, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A technique for low-temperature (≤300°C) formation of largegrain (≥10 μm) Ge-rich SiGe crystals on insulator, whose orientation and position are controlled, should be developed to realize flexible electronics. To achieve this, the gold-induced layerexchange crystallization technique using a-SiGe/Au stacked structures has been investigated. By introduction of diffusion control layers into the a-SiGe/Au interface, (111)-oriented largegrain Ge-rich SiGe crystals are achieved on insulating substrates at low temperatures (≤300°C). Moreover, position control of largegrain crystals becomes possible by patterning the diffusion control layers. This low-temperature growth technique is expected to be useful to realize flexible electronics.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
EditorsY. Kuo
PublisherElectrochemical Society Inc.
Pages95-103
Number of pages9
Volume75
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: Oct 2 2016Oct 7 2016

Other

OtherSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period10/2/1610/7/16

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Sadoh, T., Aoki, R., Tanaka, T., Park, J. H., & Miyao, M. (2016). Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. In Y. Kuo (Ed.), Thin Film Transistors 13, TFT 13 (10 ed., Vol. 75, pp. 95-103). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0095ecst