アルミニウム誘起層交換法によるSiGe/ガラスの低温成長

Translated title of the contribution: Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange

黒澤 昌志, 川畑 直之, 佐道 泰造, 宮尾 正信

Research output: Contribution to journalArticlepeer-review

Abstract

Low-temperature (<550℃) Al-induced crystallization (AIC) of amorphous Si_<1-x>Ge_x (x=0-1) on glass substrate has been investigated to achieve high-speed thin-film transistors and high-efficiency thin-film solar cells. Crystal growth morphology drastically changed with Ge fraction, and layer exchange occurred heterogeneously for high Ge fractions (>50%). To solve this problem, the effects of interfacial oxide thickness on AIC growth were investigated. As a result, homogeneous layer exchange was achieved for samples with the whole Ge fractions (x=0-1) by controlling the air exposure time. These new findings will be a powerful tool to obtain high quality poly-SiGe films on glass substrates.
Translated title of the contributionLow-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange
Original languageJapanese
Pages (from-to)19-23
Number of pages5
JournalIEICE technical report
Volume109
Issue number20
Publication statusPublished - Apr 17 2009

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