Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation

Liwei Zhao, Nam Hoai Luu, Dong Wang, Youhei Sugimoto, Ken Ichi Ikeda, Hideharu Nakashima, Hiroshi Nakashima

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An amorphous silicon nitride thin film has been fabricated by electron cyclotron resonance plasma irradiation. The growth of the film is carried out by Ar/N2 mixed plasma irradiation at a low temperature of 400°C. It is found that nitrogen partial pressure decisively affects film quality. A SiN film having a structure nearest to stoichiometric construction is obtained by precisely controlling the N2 mixing ratio at 60%. This implies that the existence of Ar with a suitable partial pressure increases the nitrogen radical concentration in the Ar/N2 mixed plasma. Under optimum conditions, the as-grown SiN film shows a leakage current more than two orders of magnitude lower than that of thermally grown SiO2 having the same equivalent oxide thickness. A high-resolution transmission electron micrograph shows an atomically flat interface of the Si substrate and SiN film.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume43
Issue number1 A/B
DOIs
Publication statusPublished - Jan 15 2004

Fingerprint

Electron cyclotron resonance
Growth temperature
electron cyclotron resonance
Silicon nitride
silicon nitrides
Irradiation
Plasmas
irradiation
Partial pressure
partial pressure
Nitrogen
nitrogen
mixing ratios
Amorphous silicon
Leakage currents
amorphous silicon
leakage
Thin films
Oxides
oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation. / Zhao, Liwei; Luu, Nam Hoai; Wang, Dong; Sugimoto, Youhei; Ikeda, Ken Ichi; Nakashima, Hideharu; Nakashima, Hiroshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 43, No. 1 A/B, 15.01.2004.

Research output: Contribution to journalArticle

@article{98947525bc4c4430860b97ddc7ed5e02,
title = "Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation",
abstract = "An amorphous silicon nitride thin film has been fabricated by electron cyclotron resonance plasma irradiation. The growth of the film is carried out by Ar/N2 mixed plasma irradiation at a low temperature of 400°C. It is found that nitrogen partial pressure decisively affects film quality. A SiN film having a structure nearest to stoichiometric construction is obtained by precisely controlling the N2 mixing ratio at 60{\%}. This implies that the existence of Ar with a suitable partial pressure increases the nitrogen radical concentration in the Ar/N2 mixed plasma. Under optimum conditions, the as-grown SiN film shows a leakage current more than two orders of magnitude lower than that of thermally grown SiO2 having the same equivalent oxide thickness. A high-resolution transmission electron micrograph shows an atomically flat interface of the Si substrate and SiN film.",
author = "Liwei Zhao and Luu, {Nam Hoai} and Dong Wang and Youhei Sugimoto and Ikeda, {Ken Ichi} and Hideharu Nakashima and Hiroshi Nakashima",
year = "2004",
month = "1",
day = "15",
doi = "10.1143/JJAP.43.L47",
language = "English",
volume = "43",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "1 A/B",

}

TY - JOUR

T1 - Low-Temperature Growth of Thin Silicon Nitride Film by Electron Cyclotron Resonance Plasma Irradiation

AU - Zhao, Liwei

AU - Luu, Nam Hoai

AU - Wang, Dong

AU - Sugimoto, Youhei

AU - Ikeda, Ken Ichi

AU - Nakashima, Hideharu

AU - Nakashima, Hiroshi

PY - 2004/1/15

Y1 - 2004/1/15

N2 - An amorphous silicon nitride thin film has been fabricated by electron cyclotron resonance plasma irradiation. The growth of the film is carried out by Ar/N2 mixed plasma irradiation at a low temperature of 400°C. It is found that nitrogen partial pressure decisively affects film quality. A SiN film having a structure nearest to stoichiometric construction is obtained by precisely controlling the N2 mixing ratio at 60%. This implies that the existence of Ar with a suitable partial pressure increases the nitrogen radical concentration in the Ar/N2 mixed plasma. Under optimum conditions, the as-grown SiN film shows a leakage current more than two orders of magnitude lower than that of thermally grown SiO2 having the same equivalent oxide thickness. A high-resolution transmission electron micrograph shows an atomically flat interface of the Si substrate and SiN film.

AB - An amorphous silicon nitride thin film has been fabricated by electron cyclotron resonance plasma irradiation. The growth of the film is carried out by Ar/N2 mixed plasma irradiation at a low temperature of 400°C. It is found that nitrogen partial pressure decisively affects film quality. A SiN film having a structure nearest to stoichiometric construction is obtained by precisely controlling the N2 mixing ratio at 60%. This implies that the existence of Ar with a suitable partial pressure increases the nitrogen radical concentration in the Ar/N2 mixed plasma. Under optimum conditions, the as-grown SiN film shows a leakage current more than two orders of magnitude lower than that of thermally grown SiO2 having the same equivalent oxide thickness. A high-resolution transmission electron micrograph shows an atomically flat interface of the Si substrate and SiN film.

UR - http://www.scopus.com/inward/record.url?scp=1842658967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1842658967&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.L47

DO - 10.1143/JJAP.43.L47

M3 - Article

AN - SCOPUS:1842658967

VL - 43

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1 A/B

ER -