Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application

Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

Abstract

Effects of Fe/Si ratio and growth temperature were investigated in order to realize high quality Fe<sub>3</sub>Si/Ge structures. It was found that very small <i>X</i>min values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometric condition. From TEM observation, it was rvealed that the Fe<sub>3</sub>Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe<sub>3</sub>Si/Ge structures was guaranteed up to 400°C. These results suggested that growth at a low temperature (<200°C) under the stoichiometric condition was essential to obtain high quality Fe<sub>3</sub>Si/Ge structures with sharp interfaces.
Original languageEnglish
Pages (from-to)708-711
Number of pages4
JournalIEICE Transactions on Electronics
Volume91
Issue number5
DOIs
Publication statusPublished - May 1 2008

Fingerprint Dive into the research topics of 'Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application'. Together they form a unique fingerprint.

Cite this