Effects of Fe/Si ratio and growth temperatore were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometrie condition. From TEM nhservation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge stmctures was guaranteed up to 400° C. These results suggested that growth at a low temperature (< 200° C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials