Low temperature hetero-epitaxy of ferromagnetic suicide on ge substrates for spin-transistor application

Yu Ichiro Ando, Koji Uedat, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao

Research output: Contribution to journalArticle

Abstract

Effects of Fe/Si ratio and growth temperatore were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometrie condition. From TEM nhservation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge stmctures was guaranteed up to 400° C. These results suggested that growth at a low temperature (< 200° C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.

Original languageEnglish
Pages (from-to)708-711
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE91-C
Issue number5
DOIs
Publication statusPublished - May 2008

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Epitaxial growth
Transistors
Substrates
Thermodynamic stability
Transmission electron microscopy
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Low temperature hetero-epitaxy of ferromagnetic suicide on ge substrates for spin-transistor application. / Ando, Yu Ichiro; Uedat, Koji; Kumano, Mamoru; Sadoh, Taizoh; Narumi, Kazumasa; Maeda, Yoshihito; Miyao, Masanobu.

In: IEICE Transactions on Electronics, Vol. E91-C, No. 5, 05.2008, p. 708-711.

Research output: Contribution to journalArticle

Ando, Yu Ichiro ; Uedat, Koji ; Kumano, Mamoru ; Sadoh, Taizoh ; Narumi, Kazumasa ; Maeda, Yoshihito ; Miyao, Masanobu. / Low temperature hetero-epitaxy of ferromagnetic suicide on ge substrates for spin-transistor application. In: IEICE Transactions on Electronics. 2008 ; Vol. E91-C, No. 5. pp. 708-711.
@article{fabbbc8e0136458b86d1e58ff217512a,
title = "Low temperature hetero-epitaxy of ferromagnetic suicide on ge substrates for spin-transistor application",
abstract = "Effects of Fe/Si ratio and growth temperatore were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3{\%}) were achieved in a wide temperature range of 60-200°C under the stoichiometrie condition. From TEM nhservation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge stmctures was guaranteed up to 400° C. These results suggested that growth at a low temperature (< 200° C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.",
author = "Ando, {Yu Ichiro} and Koji Uedat and Mamoru Kumano and Taizoh Sadoh and Kazumasa Narumi and Yoshihito Maeda and Masanobu Miyao",
year = "2008",
month = "5",
doi = "10.1093/ietele/e91-c.5.708",
language = "English",
volume = "E91-C",
pages = "708--711",
journal = "IEICE Transactions on Electronics",
issn = "0916-8524",
publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",
number = "5",

}

TY - JOUR

T1 - Low temperature hetero-epitaxy of ferromagnetic suicide on ge substrates for spin-transistor application

AU - Ando, Yu Ichiro

AU - Uedat, Koji

AU - Kumano, Mamoru

AU - Sadoh, Taizoh

AU - Narumi, Kazumasa

AU - Maeda, Yoshihito

AU - Miyao, Masanobu

PY - 2008/5

Y1 - 2008/5

N2 - Effects of Fe/Si ratio and growth temperatore were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometrie condition. From TEM nhservation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge stmctures was guaranteed up to 400° C. These results suggested that growth at a low temperature (< 200° C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.

AB - Effects of Fe/Si ratio and growth temperatore were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometrie condition. From TEM nhservation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge stmctures was guaranteed up to 400° C. These results suggested that growth at a low temperature (< 200° C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.

UR - http://www.scopus.com/inward/record.url?scp=77953574889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953574889&partnerID=8YFLogxK

U2 - 10.1093/ietele/e91-c.5.708

DO - 10.1093/ietele/e91-c.5.708

M3 - Article

AN - SCOPUS:77953574889

VL - E91-C

SP - 708

EP - 711

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

SN - 0916-8524

IS - 5

ER -