Low temperature hetero-epitaxy of ferromagnetic suicide on ge substrates for spin-transistor application

Yu Ichiro Ando, Koji Uedat, Mamoru Kumano, Taizoh Sadoh, Kazumasa Narumi, Yoshihito Maeda, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

Abstract

Effects of Fe/Si ratio and growth temperatore were investigated in order to realize high quality Fe3Si/Ge structures. It was found that very small Xmin values (2-3%) were achieved in a wide temperature range of 60-200°C under the stoichiometrie condition. From TEM nhservation, it was rvealed that the Fe3Si/Ge structures with atomically flat interfaces were realized. In addition, thermal stability of the Fe3Si/Ge stmctures was guaranteed up to 400° C. These results suggested that growth at a low temperature (< 200° C) under the stoichiometric condition was essential to obtain high quality Fe3Si/Ge structures with sharp interfaces.

Original languageEnglish
Pages (from-to)708-711
Number of pages4
JournalIEICE Transactions on Electronics
VolumeE91-C
Issue number5
DOIs
Publication statusPublished - May 2008

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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