Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance

T. Kikuchi, K. Imokawa, Akihiro Ikeda, D. Nakamura, Tanemasa Asano, H. Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (∼1 × 1021/cm3 at the surface) was achieved by laser ablation of the SiNx film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10-5 Ωi1/2ycm2 was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (∼1 × 1021/cm3 at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10-4 Ωi1/2ycm2 was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.

Original languageEnglish
Title of host publicationLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV
EditorsTetsuya Makimura, Gediminas Raciukaitis, Carlos Molpeceres
PublisherSPIE
ISBN (Electronic)9781510624528
DOIs
Publication statusPublished - Jan 1 2019
EventLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV 2019 - San Francisco, United States
Duration: Feb 4 2019Feb 6 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10905
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV 2019
CountryUnited States
CitySan Francisco
Period2/4/192/6/19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Kikuchi, T., Imokawa, K., Ikeda, A., Nakamura, D., Asano, T., & Ikenoue, H. (2019). Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance. In T. Makimura, G. Raciukaitis, & C. Molpeceres (Eds.), Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV [109050Z] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10905). SPIE. https://doi.org/10.1117/12.2509191