Low-temperature LD direct bonding for highly functional optical MEMS

E. Higurashi; T. Itoh; T. Suga; Renshi Sawada

doi:10.1109/OMEMS.2005.1540149

Low-temperature LD direct bonding for highly functional optical MEMS

E. Higurashi, T. Itoh, T. Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

Original language	English
Title of host publication	IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications
Pages	201-202
Number of pages	2
DOIs	https://doi.org/10.1109/OMEMS.2005.1540149
Publication status	Published - 2005
Event	IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications - Oulu, Finland Duration: Aug 1 2005 → Aug 4 2005

Other

Other	IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications
Country/Territory	Finland
City	Oulu
Period	8/1/05 → 8/4/05

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1109/OMEMS.2005.1540149

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Higurashi, E, Itoh, T, Suga, T & Sawada, R 2005, Low-temperature LD direct bonding for highly functional optical MEMS. in IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications., 1540149, pp. 201-202, IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications, Oulu, Finland, 8/1/05. https://doi.org/10.1109/OMEMS.2005.1540149

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abstract = "This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.",

author = "E. Higurashi and T. Itoh and T. Suga and Renshi Sawada",

year = "2005",

doi = "10.1109/OMEMS.2005.1540149",

language = "English",

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pages = "201--202",

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N2 - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

AB - This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

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M3 - Conference contribution

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Y2 - 1 August 2005 through 4 August 2005

ER -

Low-temperature LD direct bonding for highly functional optical MEMS

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