Low-temperature LD direct bonding for highly functional optical MEMS

E. Higurashi, T. Itoh, T. Suga, Renshi Sawada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    7 Citations (Scopus)

    Abstract

    This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

    Original languageEnglish
    Title of host publicationIEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications
    Pages201-202
    Number of pages2
    DOIs
    Publication statusPublished - 2005
    EventIEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications - Oulu, Finland
    Duration: Aug 1 2005Aug 4 2005

    Other

    OtherIEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications
    CountryFinland
    CityOulu
    Period8/1/058/4/05

    All Science Journal Classification (ASJC) codes

    • Engineering(all)

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