Low-temperature LD direct bonding for highly functional optical MEMS

E. Higurashi, T. Itoh, T. Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.

Original languageEnglish
Title of host publicationIEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications
Pages201-202
Number of pages2
DOIs
Publication statusPublished - 2005
EventIEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications - Oulu, Finland
Duration: Aug 1 2005Aug 4 2005

Other

OtherIEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications
CountryFinland
CityOulu
Period8/1/058/4/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Low-temperature LD direct bonding for highly functional optical MEMS'. Together they form a unique fingerprint.

  • Cite this

    Higurashi, E., Itoh, T., Suga, T., & Sawada, R. (2005). Low-temperature LD direct bonding for highly functional optical MEMS. In IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications (pp. 201-202). [1540149] https://doi.org/10.1109/OMEMS.2005.1540149