Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

K. Iseri, W.-C. Wen, K. Yamamoto, Dong Wang, H. Nakashima

Research output: Contribution to conferencePaperpeer-review

Translated title of the contributionLow Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices
Original languageEnglish
Pages639-640
Number of pages2
DOIs
Publication statusPublished - Sep 2019
EventThe 2019 International Conference on Solid State Devices and Materials (SSDM2019) - Nagoya University, Japan, Nagoya, Japan
Duration: Sep 2 2019Sep 5 2019
https://www.ssdm.jp/2019/

Conference

ConferenceThe 2019 International Conference on Solid State Devices and Materials (SSDM2019)
Country/TerritoryJapan
CityNagoya
Period9/2/199/5/19
Internet address

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