Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

K. Iseri, W.-C. Wen, K. Yamamoto, Dong Wang, H. Nakashima

Research output: Contribution to conference › Paper › peer-review

Translated title of the contribution	Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices
Original language	English
Pages	639-640
Number of pages	2
DOIs	https://doi.org/10.7567/ssdm.2019.ps-1-08
Publication status	Published - Sep 2019
Event	The 2019 International Conference on Solid State Devices and Materials (SSDM2019) - Nagoya University, Japan, Nagoya, Japan Duration: Sep 2 2019 → Sep 5 2019 https://www.ssdm.jp/2019/

Conference	The 2019 International Conference on Solid State Devices and Materials (SSDM2019)
Country/Territory	Japan
City	Nagoya
Period	9/2/19 → 9/5/19
Internet address	https://www.ssdm.jp/2019/

Access to Document

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title = "Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices",

author = "K. Iseri and W.-C. Wen and K. Yamamoto and Dong Wang and H. Nakashima",

year = "2019",

month = sep,

doi = "10.7567/ssdm.2019.ps-1-08",

language = "English",

pages = "639--640",

note = "The 2019 International Conference on Solid State Devices and Materials (SSDM2019) ; Conference date: 02-09-2019 Through 05-09-2019",

url = "https://www.ssdm.jp/2019/",

}

TY - CONF

T1 - Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices

AU - Iseri, K.

AU - Wen, W.-C.

AU - Yamamoto, K.

AU - Wang, Dong

AU - Nakashima, H.

PY - 2019/9

Y1 - 2019/9

U2 - 10.7567/ssdm.2019.ps-1-08

DO - 10.7567/ssdm.2019.ps-1-08

M3 - Paper

SP - 639

EP - 640

T2 - The 2019 International Conference on Solid State Devices and Materials (SSDM2019)

Y2 - 2 September 2019 through 5 September 2019

ER -