Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics

T. Sadoh, J. H. Park, M. Kurosawa, M. Miyao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-temperature (≤250°C) formation of orientation-controlled large-grain (>10 μm) poly-SiGe on amorphous insulator is essential to realize flexible electronics. In line with this, metalinduced crystallization of SiGe is investigated. By employing Au and Sn as catalysts, SiGe crystallization at 250°C and 150°C, respectively, becomes possible. Moreover, a technique for formation of orientation-controlled large-grain crystals is examined by modulation of nucleation in gold-induced crystallization. This achieves selectively (100)-or (111)-oriented large-grain (≥20 μm) crystals on amorphous insulators. This technique is expected to facilitate integration of advanced functional devices onto flexible substrates.

Original languageEnglish
Pages (from-to)213-221
Number of pages9
JournalECS Transactions
Volume58
Issue number9
DOIs
Publication statusPublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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