Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics

T. Sadoh, J. H. Park, M. Kurosawa, M. Miyao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-temperature (≤250°C) formation of orientation-controlled large-grain (>10 μm) poly-SiGe on amorphous insulator is essential to realize flexible electronics. In line with this, metalinduced crystallization of SiGe is investigated. By employing Au and Sn as catalysts, SiGe crystallization at 250°C and 150°C, respectively, becomes possible. Moreover, a technique for formation of orientation-controlled large-grain crystals is examined by modulation of nucleation in gold-induced crystallization. This achieves selectively (100)-or (111)-oriented large-grain (≥20 μm) crystals on amorphous insulators. This technique is expected to facilitate integration of advanced functional devices onto flexible substrates.

Original languageEnglish
Pages (from-to)213-221
Number of pages9
JournalECS Transactions
Volume58
Issue number9
DOIs
Publication statusPublished - Jan 1 2013

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Flexible electronics
Crystal orientation
Crystallization
Metals
Crystals
Temperature
Nucleation
Gold
Modulation
Catalysts
Substrates

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics. / Sadoh, T.; Park, J. H.; Kurosawa, M.; Miyao, M.

In: ECS Transactions, Vol. 58, No. 9, 01.01.2013, p. 213-221.

Research output: Contribution to journalArticle

@article{6f68e772d8484b2dbc14583f35196811,
title = "Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics",
abstract = "Low-temperature (≤250°C) formation of orientation-controlled large-grain (>10 μm) poly-SiGe on amorphous insulator is essential to realize flexible electronics. In line with this, metalinduced crystallization of SiGe is investigated. By employing Au and Sn as catalysts, SiGe crystallization at 250°C and 150°C, respectively, becomes possible. Moreover, a technique for formation of orientation-controlled large-grain crystals is examined by modulation of nucleation in gold-induced crystallization. This achieves selectively (100)-or (111)-oriented large-grain (≥20 μm) crystals on amorphous insulators. This technique is expected to facilitate integration of advanced functional devices onto flexible substrates.",
author = "T. Sadoh and Park, {J. H.} and M. Kurosawa and M. Miyao",
year = "2013",
month = "1",
day = "1",
doi = "10.1149/05809.0213ecst",
language = "English",
volume = "58",
pages = "213--221",
journal = "ECS Transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

TY - JOUR

T1 - Low-temperature metal-induced crystallization of orientation-controlled SiGe on insulator for flexible electronics

AU - Sadoh, T.

AU - Park, J. H.

AU - Kurosawa, M.

AU - Miyao, M.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Low-temperature (≤250°C) formation of orientation-controlled large-grain (>10 μm) poly-SiGe on amorphous insulator is essential to realize flexible electronics. In line with this, metalinduced crystallization of SiGe is investigated. By employing Au and Sn as catalysts, SiGe crystallization at 250°C and 150°C, respectively, becomes possible. Moreover, a technique for formation of orientation-controlled large-grain crystals is examined by modulation of nucleation in gold-induced crystallization. This achieves selectively (100)-or (111)-oriented large-grain (≥20 μm) crystals on amorphous insulators. This technique is expected to facilitate integration of advanced functional devices onto flexible substrates.

AB - Low-temperature (≤250°C) formation of orientation-controlled large-grain (>10 μm) poly-SiGe on amorphous insulator is essential to realize flexible electronics. In line with this, metalinduced crystallization of SiGe is investigated. By employing Au and Sn as catalysts, SiGe crystallization at 250°C and 150°C, respectively, becomes possible. Moreover, a technique for formation of orientation-controlled large-grain crystals is examined by modulation of nucleation in gold-induced crystallization. This achieves selectively (100)-or (111)-oriented large-grain (≥20 μm) crystals on amorphous insulators. This technique is expected to facilitate integration of advanced functional devices onto flexible substrates.

UR - http://www.scopus.com/inward/record.url?scp=84904875426&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904875426&partnerID=8YFLogxK

U2 - 10.1149/05809.0213ecst

DO - 10.1149/05809.0213ecst

M3 - Article

AN - SCOPUS:84904875426

VL - 58

SP - 213

EP - 221

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 9

ER -