Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe2MnSi on Ge(111)

K. Ueda; K. Hamaya; K. Yamamoto; Y. Ando; T. Sadoh; Y. Maeda; M. Miyao

doi:10.1063/1.2977866

Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe₂MnSi on Ge(111)

K. Ueda, K. Hamaya, K. Yamamoto, Y. Ando, T. Sadoh, Y. Maeda, M. Miyao

Electronic Devices

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Abstract

We demonstrate the epitaxial growth of ferromagnetic full-Heusler alloy Fe₂MnSi layers on group-IV semiconductor Ge(111) using molecular beam epitaxy at the growth temperatures of 130 and 200 °C. The Fe ₂MnSi/Ge (111) layers have an atomic-scale abrupt interface and include the ordered L2₁ phase. We also show ferromagnetic features with a saturation magnetization of ∼2.2 μB /f.u. and a Curie temperature of ∼210 K, which are nearly comparable to those of bulk Fe₂MnSi.

Original language	English
Article number	112108
Journal	Applied Physics Letters
Volume	93
Issue number	11
DOIs	https://doi.org/10.1063/1.2977866
Publication status	Published - Sep 29 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "We demonstrate the epitaxial growth of ferromagnetic full-Heusler alloy Fe2MnSi layers on group-IV semiconductor Ge(111) using molecular beam epitaxy at the growth temperatures of 130 and 200 °C. The Fe 2MnSi/Ge (111) layers have an atomic-scale abrupt interface and include the ordered L21 phase. We also show ferromagnetic features with a saturation magnetization of ∼2.2 μB /f.u. and a Curie temperature of ∼210 K, which are nearly comparable to those of bulk Fe2MnSi.",

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T1 - Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe2MnSi on Ge(111)

AU - Ueda, K.

AU - Hamaya, K.

AU - Yamamoto, K.

AU - Ando, Y.

AU - Sadoh, T.

AU - Maeda, Y.

AU - Miyao, M.

PY - 2008/9/29

Y1 - 2008/9/29

N2 - We demonstrate the epitaxial growth of ferromagnetic full-Heusler alloy Fe2MnSi layers on group-IV semiconductor Ge(111) using molecular beam epitaxy at the growth temperatures of 130 and 200 °C. The Fe 2MnSi/Ge (111) layers have an atomic-scale abrupt interface and include the ordered L21 phase. We also show ferromagnetic features with a saturation magnetization of ∼2.2 μB /f.u. and a Curie temperature of ∼210 K, which are nearly comparable to those of bulk Fe2MnSi.

AB - We demonstrate the epitaxial growth of ferromagnetic full-Heusler alloy Fe2MnSi layers on group-IV semiconductor Ge(111) using molecular beam epitaxy at the growth temperatures of 130 and 200 °C. The Fe 2MnSi/Ge (111) layers have an atomic-scale abrupt interface and include the ordered L21 phase. We also show ferromagnetic features with a saturation magnetization of ∼2.2 μB /f.u. and a Curie temperature of ∼210 K, which are nearly comparable to those of bulk Fe2MnSi.

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