@article{29288f9b100d42bfbfad89ae2fcceb64,
title = "Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe2MnSi on Ge(111)",
abstract = "We demonstrate the epitaxial growth of ferromagnetic full-Heusler alloy Fe2MnSi layers on group-IV semiconductor Ge(111) using molecular beam epitaxy at the growth temperatures of 130 and 200 °C. The Fe 2MnSi/Ge (111) layers have an atomic-scale abrupt interface and include the ordered L21 phase. We also show ferromagnetic features with a saturation magnetization of ∼2.2 μB /f.u. and a Curie temperature of ∼210 K, which are nearly comparable to those of bulk Fe2MnSi.",
author = "K. Ueda and K. Hamaya and K. Yamamoto and Y. Ando and T. Sadoh and Y. Maeda and M. Miyao",
note = "Funding Information: K.H. and M.M. thank Professor T. Ono of Kyoto University and Professor O. Nakatsuka and Professor S. Zaima of Nagoya University for providing the opportunity to use a SQUID magnetometer and a high-resolution x-ray diffractometer, respectively. K.U. and Y.A. acknowledge the support from the JSPS Research Program for Young Scientists. This work was partly supported by Grant-in-Aid for Scientific Research on Priority Area (Grant No. 18063018) from the Ministry of Education, Culture, Sports, Science, and Technology, Japan. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",
year = "2008",
doi = "10.1063/1.2977866",
language = "English",
volume = "93",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}