Low-temperature molecular beam epitaxy of a ferromagnetic full-Heusler alloy Fe2MnSi on Ge(111)

K. Ueda, K. Hamaya, K. Yamamoto, Y. Ando, T. Sadoh, Y. Maeda, M. Miyao

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We demonstrate the epitaxial growth of ferromagnetic full-Heusler alloy Fe2MnSi layers on group-IV semiconductor Ge(111) using molecular beam epitaxy at the growth temperatures of 130 and 200 °C. The Fe 2MnSi/Ge (111) layers have an atomic-scale abrupt interface and include the ordered L21 phase. We also show ferromagnetic features with a saturation magnetization of ∼2.2 μB /f.u. and a Curie temperature of ∼210 K, which are nearly comparable to those of bulk Fe2MnSi.

Original languageEnglish
Article number112108
JournalApplied Physics Letters
Issue number11
Publication statusPublished - Sep 29 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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