TY - JOUR
T1 - Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation
AU - Tsunoda, Isao
AU - Nagata, Tomohiro
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
N1 - Funding Information:
A part of this work was supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Science, and Technology of Japan.
PY - 2002/2/14
Y1 - 2002/2/14
N2 - Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.
AB - Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.
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U2 - 10.1016/S0921-5107(01)00770-X
DO - 10.1016/S0921-5107(01)00770-X
M3 - Article
AN - SCOPUS:0037074792
VL - 89
SP - 336
EP - 340
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -