Abstract
Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.
Original language | English |
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Pages (from-to) | 336-340 |
Number of pages | 5 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 89 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - Feb 14 2002 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering