Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation

Isao Tsunoda; Tomohiro Nagata; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/S0921-5107(01)00770-X

Low-temperature solid-phase crystallization of a-Si_1-xGe_x on SiO₂ by ion-beam stimulation

Isao Tsunoda, Tomohiro Nagata, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO₂ have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 10¹⁶ cm^-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.

Original language	English
Pages (from-to)	336-340
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	89
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(01)00770-X
Publication status	Published - Feb 14 2002

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/S0921-5107(01)00770-X

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Low-temperature solid-phase crystallization of a-Si_1-xGe_x on SiO₂ by ion-beam stimulation. / Tsunoda, Isao; Nagata, Tomohiro; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 89, No. 1-3, 14.02.2002, p. 336-340.

Research output: Contribution to journal › Article › peer-review

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abstract = "Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.",

author = "Isao Tsunoda and Tomohiro Nagata and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

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AU - Sadoh, Taizoh

AU - Miyao, Masanobu

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N2 - Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.

AB - Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.

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Low-temperature solid-phase crystallization of a-Si_1-xGe_x on SiO₂ by ion-beam stimulation

Abstract

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