Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation

Isao Tsunoda, Tomohiro Nagata, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.

Original languageEnglish
Pages (from-to)336-340
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume89
Issue number1-3
DOIs
Publication statusPublished - Feb 14 2002

Fingerprint

Crystallization
stimulation
Ion beams
solid phases
ion beams
Modulation
crystallization
modulation
Thin film transistors
Ion bombardment
ion irradiation
Polysilicon
Nucleation
transistors
Doping (additives)
nucleation
Annealing
X ray diffraction
Glass
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation. / Tsunoda, Isao; Nagata, Tomohiro; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 89, No. 1-3, 14.02.2002, p. 336-340.

Research output: Contribution to journalArticle

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