Abstract
Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 336-340 |
| Number of pages | 5 |
| Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
| Volume | 89 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - Feb 14 2002 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation. / Tsunoda, Isao; Nagata, Tomohiro; Kenjo, Atsushi; Sadoh, Taizoh; Miyao, Masanobu.
In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 89, No. 1-3, 14.02.2002, p. 336-340.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation
AU - Tsunoda, Isao
AU - Nagata, Tomohiro
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Miyao, Masanobu
PY - 2002/2/14
Y1 - 2002/2/14
N2 - Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.
AB - Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.
UR - http://www.scopus.com/inward/record.url?scp=0037074792&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037074792&partnerID=8YFLogxK
U2 - 10.1016/S0921-5107(01)00770-X
DO - 10.1016/S0921-5107(01)00770-X
M3 - Article
AN - SCOPUS:0037074792
VL - 89
SP - 336
EP - 340
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-3
ER -