Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Tanemasa Asano, Masanobu Miyao

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Low-temperature (<500 °C) solid-phase crystallization (SPC) of amorphous Si1-xGex (x: 0-0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (∼4 μm) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600 °C.

Original languageEnglish
Pages (from-to)1221-1224
Number of pages4
JournalSolid-State Electronics
Issue number8
Publication statusPublished - Aug 1 2008


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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