Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

Kaoru Toko, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Tanemasa Asano, Masanobu Miyao

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low-temperature (<500 °C) solid-phase crystallization (SPC) of amorphous Si1-xGex (x: 0-0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (∼4 μm) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600 °C.

Original languageEnglish
Pages (from-to)1221-1224
Number of pages4
JournalSolid-State Electronics
Volume52
Issue number8
DOIs
Publication statusPublished - Aug 1 2008

Fingerprint

Crystallization
solid phases
crystallization
Glass
glass
Temperature
crystallinity
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique. / Toko, Kaoru; Kanno, Hiroshi; Kenjo, Atsushi; Sadoh, Taizoh; Asano, Tanemasa; Miyao, Masanobu.

In: Solid-State Electronics, Vol. 52, No. 8, 01.08.2008, p. 1221-1224.

Research output: Contribution to journalArticle

Toko, Kaoru ; Kanno, Hiroshi ; Kenjo, Atsushi ; Sadoh, Taizoh ; Asano, Tanemasa ; Miyao, Masanobu. / Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique. In: Solid-State Electronics. 2008 ; Vol. 52, No. 8. pp. 1221-1224.
@article{d1e47521b9644b5681fddc2ad2ea6b02,
title = "Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique",
abstract = "Low-temperature (<500 °C) solid-phase crystallization (SPC) of amorphous Si1-xGex (x: 0-0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (∼4 μm) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600 °C.",
author = "Kaoru Toko and Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Tanemasa Asano and Masanobu Miyao",
year = "2008",
month = "8",
day = "1",
doi = "10.1016/j.sse.2008.05.009",
language = "English",
volume = "52",
pages = "1221--1224",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "8",

}

TY - JOUR

T1 - Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique

AU - Toko, Kaoru

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Asano, Tanemasa

AU - Miyao, Masanobu

PY - 2008/8/1

Y1 - 2008/8/1

N2 - Low-temperature (<500 °C) solid-phase crystallization (SPC) of amorphous Si1-xGex (x: 0-0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (∼4 μm) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600 °C.

AB - Low-temperature (<500 °C) solid-phase crystallization (SPC) of amorphous Si1-xGex (x: 0-0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (∼4 μm) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600 °C.

UR - http://www.scopus.com/inward/record.url?scp=48549105136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=48549105136&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2008.05.009

DO - 10.1016/j.sse.2008.05.009

M3 - Article

AN - SCOPUS:48549105136

VL - 52

SP - 1221

EP - 1224

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 8

ER -