TY - JOUR
T1 - Low-temperature solid-phase crystallization of amorphous SiGe films on glass by imprint technique
AU - Toko, Kaoru
AU - Kanno, Hiroshi
AU - Kenjo, Atsushi
AU - Sadoh, Taizoh
AU - Asano, Tanemasa
AU - Miyao, Masanobu
N1 - Funding Information:
The authors gratefully acknowledge Dr. Akiyoshi Baba of Kyushu Institute of Technology for his assistance of sample preparation. This work was partially supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2008/8
Y1 - 2008/8
N2 - Low-temperature (<500 °C) solid-phase crystallization (SPC) of amorphous Si1-xGex (x: 0-0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (∼4 μm) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600 °C.
AB - Low-temperature (<500 °C) solid-phase crystallization (SPC) of amorphous Si1-xGex (x: 0-0.7) films was examined on insulating substrates by using Ni-imprint technique. Incubation time for SPC was remarkably reduced by catalytic effects without changing growth velocity. As a result, Ni-free large SiGe grains (∼4 μm) were obtained at controlled positions. The crystallinity of the grown regions was almost the same as that of poly-SiGe formed by the conventional high temperature SPC at 600 °C.
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U2 - 10.1016/j.sse.2008.05.009
DO - 10.1016/j.sse.2008.05.009
M3 - Article
AN - SCOPUS:48549105136
SN - 0038-1101
VL - 52
SP - 1221
EP - 1224
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 8
ER -